M29W160EB70N3E vs M29W160EB70N3F 比較
詳細並排比較 M29W160EB70N3E 由 Micron Technology 與 M29W160EB70N3F 由 Micron Technology. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | M29W160EB70N3E | M29W160EB70N3F |
|---|---|---|
| 品牌 | Micron Technology | Micron Technology |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 記憶體類型 | FLASH - NOR | FLASH - NOR |
| 記憶體容量 | 16 Mbit (2M x8, 1M x16) | 16 Mbit (2M x8 / 1M x16) |
| 組織 | 2M x8 / 1M x16 | — |
| Access Time | 70 ns | 70 ns |
| 介面 | Parallel | Parallel (Byte/Word-wide) |
| Supply Voltage (VCC) | 2.7 V to 3.6 V | 2.7 V to 3.6 V |
| Programming Time | 10 us (typical) | 10 us per byte/word (typical) |
| Cell Type | SLC NOR | — |
| 工作溫度 | -40C to +125C | [DATA_NEEDED: operating temperature range] |
| 封裝 / 外殼 | 48-TFSOP (0.724 in, 18.40 mm width) | 48-TSOP (0.724 in, 18.40 mm width) |
| 安裝類型 | Surface Mount | Surface Mount |
| Packaging | Tray | Tape & Reel |
| Speed Grade | -70 | — |
| FBGA Code | N/A (TSOP package) | — |
| RoHS 狀態 | [DATA_NEEDED: RoHS status] | — |
| MSL 等級 | [DATA_NEEDED: moisture sensitivity level] | [DATA_NEEDED: moisture sensitivity level] |
| Boot Block Position | — | Bottom boot block |
| Bus Configuration | — | x8 / x16 selectable (BYTE# pin) |
| Qualification | — | Automotive, AEC-Q100 |
| Erase Architecture | — | Block erase (boot block + main blocks) |
| Common Flash Interface | — | Yes (CFI compliant) |
| Reset Input | — | RESET# hardware reset pin |