M29W160EB70N3E vs M29W160FB70N3E Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci M29W160EB70N3E disebabkan oleh Micron Technology dan M29W160FB70N3E disebabkan oleh Micron Technology. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Micron Technology
M29W160EB70N3E M29W160EB70N3E - 16Mbit NOR Flash 70ns 48-TSOP | Micron

M29W160EB70N3E - 16Mbit NOR Flash 70ns 48-TSOP | Micron

M29W160EB70N3E ✓ Aktif
Micron Technology
M29W160FB70N3E M29W160FB70N3E - 16Mb 3V Parallel NOR Flash 70ns | Micron

M29W160FB70N3E - 16Mb 3V Parallel NOR Flash 70ns | Micron

M29W160FB70N3E ✓ Aktif

Pengandingan Spesifikasi

Parametr M29W160EB70N3E M29W160FB70N3E
Merek Micron Technology Micron Technology
Kategori Memory ICs Memory ICs
Status Lingkungan Hidup Aktif Aktif
Jenis Ingatan FLASH - NOR FLASH - NOR
Saiz Ingatan 16 Mbit (2M x8, 1M x16) 16 Mbit (2M x8 / 1M x16)
Organisasi 2M x8 / 1M x16 —
Access Time 70 ns 70 ns
Antaramuka Parallel Parallel
Supply Voltage (VCC) 2.7 V to 3.6 V 3.0 V to 3.6 V
Programming Time 10 us (typical) —
Cell Type SLC NOR —
Suhu Operasi -40C to +125C [DATA_NEEDED: operating temperature range]
Kemasan / Case 48-TFSOP (0.724 in, 18.40 mm width) 48-TFSOP (0.724 in, 18.40 mm width)
Jenis Pemasangan Surface Mount Surface Mount
Packaging Tray Tray
Speed Grade -70 —
FBGA Code N/A (TSOP package) —
Status RoHS [DATA_NEEDED: RoHS status] —
Aras MSL [DATA_NEEDED: moisture sensitivity level] —
Programming Voltage — Single supply (no separate VPP required)
Bus Configuration — x8 / x16 selectable (BYTE# pin)
Architecture — Boot block
Program/Erase Endurance — [DATA_NEEDED: program/erase cycles]
Data Retention — [DATA_NEEDED: data retention]
Status Output — Data polling / toggle bit
Block Protection — Yes (boot block protection)

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