M29W160ET70N3E vs M29W160EB70N3E Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci M29W160ET70N3E disebabkan oleh Micron Technology dan M29W160EB70N3E disebabkan oleh Micron Technology. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Micron Technology
M29W160ET70N3E - 16Mb 3V Parallel NOR Flash 70ns TSOP48 | Micron
M29W160ET70N3E ✓ Aktif
Pengandingan Spesifikasi
| Parametr | M29W160ET70N3E | M29W160EB70N3E |
|---|---|---|
| Merek | Micron Technology | Micron Technology |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | NOR Flash (Parallel) | FLASH - NOR |
| Saiz Ingatan | 16 Mbit | 16 Mbit (2M x8, 1M x16) |
| Organisasi | 2M x 8 / 1M x 16 | 2M x8 / 1M x16 |
| Access Time | 70 ns | 70 ns |
| Antaramuka | Parallel | Parallel |
| Tegangan Pemberi Arus | 3 V / 3.3 V (nominal) | — |
| Boot Block Location | Top boot | — |
| Kemasan | 48-TSOP | — |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q100 qualified | — |
| Suhu Operasi | [DATA_NEEDED: operating temperature range] | -40C to +125C |
| Bus Width Selection | BYTE# pin, x8 or x16 | — |
| Sector Protection | Hardware boot block protection | — |
| Programming Type | Automatic program and erase | — |
| Packing | Tray (RoHS-compliant package, standard packing) | — |
| Status RoHS | Compliant (E suffix) | [DATA_NEEDED: RoHS status] |
| Endurance | [DATA_NEEDED: program/erase cycles] | — |
| Data Retention | [DATA_NEEDED: data retention] | — |
| Supply Voltage (VCC) | — | 2.7 V to 3.6 V |
| Programming Time | — | 10 us (typical) |
| Cell Type | — | SLC NOR |
| Kemasan / Case | — | 48-TFSOP (0.724 in, 18.40 mm width) |
| Packaging | — | Tray |
| Speed Grade | — | -70 |
| FBGA Code | — | N/A (TSOP package) |
| Aras MSL | — | [DATA_NEEDED: moisture sensitivity level] |