M29W160FB70N3E vs M29W800FT70ZA3SE Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci M29W160FB70N3E disebabkan oleh Micron Technology dan M29W800FT70ZA3SE disebabkan oleh Micron Technology. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Micron Technology
M29W160FB70N3E M29W160FB70N3E - 16Mb 3V Parallel NOR Flash 70ns | Micron

M29W160FB70N3E - 16Mb 3V Parallel NOR Flash 70ns | Micron

M29W160FB70N3E ✓ Aktif
Micron Technology
M29W800FT70ZA3SE M29W800FT70ZA3SE - 8Mbit 70ns NOR Flash | Micron | Embedded

M29W800FT70ZA3SE - 8Mbit 70ns NOR Flash | Micron | Embedded

M29W800FT70ZA3SE ✓ Aktif

Pengandingan Spesifikasi

Parametr M29W160FB70N3E M29W800FT70ZA3SE
Merek Micron Technology Micron Technology
Kategori Memory ICs EEPROM
Status Lingkungan Hidup Aktif Aktif
Jenis Ingatan FLASH - NOR NOR Flash (Parallel)
Saiz Ingatan 16 Mbit (2M x8 / 1M x16) 8 Mbit
Access Time 70 ns 70 ns
Antaramuka Parallel Parallel
Supply Voltage (VCC) 3.0 V to 3.6 V —
Programming Voltage Single supply (no separate VPP required) —
Bus Configuration x8 / x16 selectable (BYTE# pin) —
Architecture Boot block —
Kemasan / Case 48-TFSOP (0.724 in, 18.40 mm width) —
Jenis Pemasangan Surface Mount Surface Mount
Packaging Tray —
Suhu Operasi [DATA_NEEDED: operating temperature range] -40C to +125C
Program/Erase Endurance [DATA_NEEDED: program/erase cycles] —
Data Retention [DATA_NEEDED: data retention] —
Status Output Data polling / toggle bit —
Block Protection Yes (boot block protection) —
Organisasi — 512K x 16
Technology — SLC
Tegangan Pemberi Arus — 2.7 V to 3.6 V
Kemasan — 48-TFBGA (6x8 mm)
Programming Interface — CFI command set
Boot Block Architecture — Top boot (FT = top boot block)
Density — 8 Mb
FBGA Code — [DATA_NEEDED: FBGA code]
Chipset Validation — N/A
Status RoHS — [DATA_NEEDED: RoHS status]
Program/Erase Cycles — [DATA_NEEDED: endurance]

Laporan Datasheet & Sumber

Lihat Semua Produk Buat BOQ Minta Bao Harga