MHT1008NT1 vs MHT1008NT1515 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci MHT1008NT1 disebabkan oleh NXP Semiconductors dan MHT1008NT1515 disebabkan oleh NXP Semiconductors. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | MHT1008NT1 | MHT1008NT1515 |
|---|---|---|
| Merek | NXP Semiconductors | NXP Semiconductors |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | NXP Semiconductors | NXP Semiconductors (formerly Freescale) |
| Part Number | MHT1008NT1 | MHT1008NT1515 |
| Jenis Transistor | LDMOS, N-Channel Enhancement-Mode | — |
| Application | RF Power Transistor, ISM Band | — |
| Operating Frequency | 2400 MHz to 2500 MHz (2450 MHz typ) | 2450 MHz (ISM band) |
| Test Frequency | 2450 MHz | — |
| Drain Supply Voltage (Vdd) | 28 V (typical) | — |
| Output Power (CW) | 12.5 W | 12.5 W |
| Power Gain (typical) | 18.6 dB at 2450 MHz | — |
| Drain Current | 110 mA | — |
| Power Gain (DigiKey reported) | 20.9 dB (max value reported by distributor) | — |
| Kemasan / Case | PLD-1.5W (SOT1811), ceramic flanged | — |
| Jenis Pemasangan | Chassis / flange mount with bolt-down heatsink | Surface Mount / Flange Mount with heat spreader |
| Status RoHS | [DATA_NEEDED: rohs_status] | Compliant |
| Lead-Free | [DATA_NEEDED: lead_free] | — |
| MSL (Moisture Sensitivity Level) | [DATA_NEEDED: msl_level] | — |
| Device Type | — | RF Power LDMOS Transistor, N-Channel Enhancement-Mode |
| Drain-Source Voltage V(BR)DSS | — | 65 V (minimum) |
| Gate Threshold Voltage VGS(th) | — | 1.6 V |
| Typical Gain | — | 20.9 dB at 2.45 GHz |
| Drain Bias (typical) | — | 28 V |
| Total Power Dissipation | — | 48.1 W |
| Suhu Hubungan Operasi | — | -40 °C to +150 °C |
| Kemasan | — | PLD-1.5W (PLD-1) ceramic flange |
| Technology | — | LDMOS (Laterally Diffused MOSFET) |