MHT1008NT1 vs MHT1008NT1515 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng MHT1008NT1 sa pamamagitan ng NXP Semiconductors at MHT1008NT1515 sa pamamagitan ng NXP Semiconductors. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
NXP Semiconductors
MHT1008NT1515 - 12.5W RF LDMOS 2450MHz ISM N-Channel | NXP
MHT1008NT1515 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | MHT1008NT1 | MHT1008NT1515 |
|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | NXP Semiconductors | NXP Semiconductors (formerly Freescale) |
| Part Number | MHT1008NT1 | MHT1008NT1515 |
| Uri ng Transistor | LDMOS, N-Channel Enhancement-Mode | — |
| Application | RF Power Transistor, ISM Band | — |
| Operating Frequency | 2400 MHz to 2500 MHz (2450 MHz typ) | 2450 MHz (ISM band) |
| Test Frequency | 2450 MHz | — |
| Drain Supply Voltage (Vdd) | 28 V (typical) | — |
| Output Power (CW) | 12.5 W | 12.5 W |
| Power Gain (typical) | 18.6 dB at 2450 MHz | — |
| Drain Current | 110 mA | — |
| Power Gain (DigiKey reported) | 20.9 dB (max value reported by distributor) | — |
| Packhaging / Kaso | PLD-1.5W (SOT1811), ceramic flanged | — |
| Uri ng Pagpapasok | Chassis / flange mount with bolt-down heatsink | Surface Mount / Flange Mount with heat spreader |
| Tindminan RoHS | [DATA_NEEDED: rohs_status] | Compliant |
| Lead-Free | [DATA_NEEDED: lead_free] | — |
| MSL (Moisture Sensitivity Level) | [DATA_NEEDED: msl_level] | — |
| Device Type | — | RF Power LDMOS Transistor, N-Channel Enhancement-Mode |
| Drain-Source Voltage V(BR)DSS | — | 65 V (minimum) |
| Gate Threshold Voltage VGS(th) | — | 1.6 V |
| Typical Gain | — | 20.9 dB at 2.45 GHz |
| Drain Bias (typical) | — | 28 V |
| Total Power Dissipation | — | 48.1 W |
| Temperature ng Junction na Operasyon | — | -40 °C to +150 °C |
| Packhaging | — | PLD-1.5W (PLD-1) ceramic flange |
| Technology | — | LDMOS (Laterally Diffused MOSFET) |