MMBF170LT1 vs 2N7002-7-F Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci MMBF170LT1 disebabkan oleh onsemi dan 2N7002-7-F disebabkan oleh Diodes Incorporated. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr MMBF170LT1 2N7002-7-F
Merek onsemi Diodes Incorporated
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer onsemi (ON Semiconductor) —
Part Number MMBF170LT1 —
Jenis Transistor N-Channel MOSFET, Enhancement Mode N-Channel Enhancement-Mode MOSFET
Drain-Source Voltage (VDSS) 60 V —
Drain-Gate Voltage (VDGS) 60 Vdc —
Gate-Source Voltage - Continuous (VGS) ±20 Vdc (per datasheet) —
Gate-Source Voltage - Non-repetitive (VGSM) ±40 Vpk (tp <= 50 ms) —
Continuous Drain Current (ID) 500 mA (Ta) —
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM pulsed value] —
Total Device Dissipation (PD) 225 mW (Ta, FR-5 board) —
Gambaran Suhu Operasi -55 °C to +150 °C (TJ max per datasheet) [DATA_NEEDED: Tj / TA operating range]
Kemasan / Case SOT-23-3 (TO-236) —
Jenis Pemasangan Surface Mount Surface Mount
Kiraan Pin 3 —
Status RoHS Compliant (per onsemi product page) Compliant
AEC-Q101 Qualified Yes (per datasheet) —
Technology DMOS Trench MOSFET
Polarity N-Channel —
Drain-Source Voltage (VDS max) — 60 V
Continuous Drain Current (ID) at Ta — 115 mA
Continuous Drain Current Range (per Mouser listing) — 105 mA to 210 mA
Power Dissipation (PD) at Ta — 370 mW
On-Resistance RDS(on) — 7.5 ohm to 13.5 ohm
Gate-Source Voltage (VGS) — +/-20 V
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical value]
Kemasan — SOT-23-3 (TO-236)
Gate Charge (Qg) — [DATA_NEEDED: total gate charge typical]
Input Capacitance (Ciss) — [DATA_NEEDED: Ciss typical]
Terminal Finish — Matte tin (solderable per MIL-STD-202, method 208)
Channel Mode — Enhancement

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