MMBF170LT1 vs 2N7002-7-F Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng MMBF170LT1 sa pamamagitan ng onsemi at 2N7002-7-F sa pamamagitan ng Diodes Incorporated. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Diodes Incorporated
2N7002-7-F - 60V N-Ch Enhancement MOSFET SOT-23 | Diodes Incorporated
2N7002-7-F ✓ NakahandaPagsanggunian na paghahambing
| Parametro | MMBF170LT1 | 2N7002-7-F |
|---|---|---|
| Brand | onsemi | Diodes Incorporated |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | onsemi (ON Semiconductor) | — |
| Part Number | MMBF170LT1 | — |
| Uri ng Transistor | N-Channel MOSFET, Enhancement Mode | N-Channel Enhancement-Mode MOSFET |
| Drain-Source Voltage (VDSS) | 60 V | — |
| Drain-Gate Voltage (VDGS) | 60 Vdc | — |
| Gate-Source Voltage - Continuous (VGS) | ±20 Vdc (per datasheet) | — |
| Gate-Source Voltage - Non-repetitive (VGSM) | ±40 Vpk (tp <= 50 ms) | — |
| Continuous Drain Current (ID) | 500 mA (Ta) | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM pulsed value] | — |
| Total Device Dissipation (PD) | 225 mW (Ta, FR-5 board) | — |
| Hanay ng Temperature na Operasyon | -55 °C to +150 °C (TJ max per datasheet) | [DATA_NEEDED: Tj / TA operating range] |
| Packhaging / Kaso | SOT-23-3 (TO-236) | — |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Bilang ng Pin | 3 | — |
| Tindminan RoHS | Compliant (per onsemi product page) | Compliant |
| AEC-Q101 Qualified | Yes (per datasheet) | — |
| Technology | DMOS | Trench MOSFET |
| Polarity | N-Channel | — |
| Drain-Source Voltage (VDS max) | — | 60 V |
| Continuous Drain Current (ID) at Ta | — | 115 mA |
| Continuous Drain Current Range (per Mouser listing) | — | 105 mA to 210 mA |
| Power Dissipation (PD) at Ta | — | 370 mW |
| On-Resistance RDS(on) | — | 7.5 ohm to 13.5 ohm |
| Gate-Source Voltage (VGS) | — | +/-20 V |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical value] |
| Packhaging | — | SOT-23-3 (TO-236) |
| Gate Charge (Qg) | — | [DATA_NEEDED: total gate charge typical] |
| Input Capacitance (Ciss) | — | [DATA_NEEDED: Ciss typical] |
| Terminal Finish | — | Matte tin (solderable per MIL-STD-202, method 208) |
| Channel Mode | — | Enhancement |