MMG3007NT1 vs MMH3111NT1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci MMG3007NT1 disebabkan oleh NXP Semiconductors dan MMH3111NT1 disebabkan oleh NXP Semiconductors. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

NXP Semiconductors
MMG3007NT1 MMG3007NT1 - 6 GHz, 19 dB Gain InGaP HBT GPA | NXP

MMG3007NT1 - 6 GHz, 19 dB Gain InGaP HBT GPA | NXP

MMG3007NT1 ✓ Aktif
NXP Semiconductors
MMH3111NT1 MMH3111NT1 - 250-4000 MHz, 12 dB, 22.5 dBm GaAs HFET GPA | NXP

MMH3111NT1 - 250-4000 MHz, 12 dB, 22.5 dBm GaAs HFET GPA | NXP

MMH3111NT1 ✓ Aktif

Pengandingan Spesifikasi

Parametr MMG3007NT1 MMH3111NT1
Merek NXP Semiconductors NXP Semiconductors
Kategori RF Amplifiers RF Amplifiers
Status Lingkungan Hidup Aktif Aktif
Manufacturer NXP Semiconductors (formerly Freescale Semiconductor) NXP Semiconductors (formerly Freescale Semiconductor)
Part Description RF Amplifier IC, General Purpose Amplifier (GPA), InGaP HBT General Purpose Amplifier (GPA)
Frequency Range 0 Hz to 6000 MHz (DC to 6 GHz) 250 MHz to 4000 MHz
Small-Signal Gain 19 dB @ 900 MHz (typical) —
P1dB Output Power 16 dBm @ 900 MHz —
Third-Order Output Intercept Point (OIP3) 30 dBm @ 900 MHz —
Tegangan Pemberi Arus 5 V (typical, single supply) 6 V nominal (per distributor listing)
Kemasan SOT-89-4 (4-pin, plastic, surface mount) SOT-89-4 (3 leads + tab)
Technology InGaP Heterojunction Bipolar Transistor (HBT) —
Input Matching Internally matched to 50 ohms —
Output Matching Internally matched to 50 ohms —
Operating Class Class A, small-signal, general purpose Class A, small-signal, high linearity
Storage Temperature Range [DATA_NEEDED: storage temperature range] —
RF Input Power (max) [DATA_NEEDED: maximum RF input power rating] —
Jenis Pemasangan Surface Mount Surface Mount
Status RoHS Compliant (per NXP product page) [DATA_NEEDED: RoHS status]
Tape and Reel Quantity 1,000 units per reel, 12 mm tape width, 7-inch reel (T1 = 1k) —
Process Technology — GaAs Heterostructure FET (HFET)
Typical Small-Signal Gain — 12 dB
Saturated Output Power (Psat) — 22.5 dBm
Input / Output Matching — Internally prematched
Application Categories — Cellular, PCS, ISM, WLL
Aras MSL — [DATA_NEEDED: MSL rating]
Suhu Operasi — [DATA_NEEDED: operating temperature range]

Laporan Datasheet & Sumber

Lihat Semua Produk Buat BOQ Minta Bao Harga