MMG3007NT1 vs MMH3111NT1 Karşılaştırma

Ayrıntılı yan yana karşılaştırma MMG3007NT1 tarafından NXP Semiconductors ve MMH3111NT1 tarafından NXP SemiconductorsAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.

NXP Semiconductors
MMG3007NT1 MMG3007NT1 - 6 GHz, 19 dB Gain InGaP HBT GPA | NXP

MMG3007NT1 - 6 GHz, 19 dB Gain InGaP HBT GPA | NXP

MMG3007NT1 ✓ Aktif
NXP Semiconductors
MMH3111NT1 MMH3111NT1 - 250-4000 MHz, 12 dB, 22.5 dBm GaAs HFET GPA | NXP

MMH3111NT1 - 250-4000 MHz, 12 dB, 22.5 dBm GaAs HFET GPA | NXP

MMH3111NT1 ✓ Aktif

Özellik Karşılaştırması

Parametre MMG3007NT1 MMH3111NT1
Marka NXP Semiconductors NXP Semiconductors
Kategori RF Amplifiers RF Amplifiers
Yaşam Döngüsü Durumu Aktif Aktif
Manufacturer NXP Semiconductors (formerly Freescale Semiconductor) NXP Semiconductors (formerly Freescale Semiconductor)
Part Description RF Amplifier IC, General Purpose Amplifier (GPA), InGaP HBT General Purpose Amplifier (GPA)
Frequency Range 0 Hz to 6000 MHz (DC to 6 GHz) 250 MHz to 4000 MHz
Small-Signal Gain 19 dB @ 900 MHz (typical) —
P1dB Output Power 16 dBm @ 900 MHz —
Third-Order Output Intercept Point (OIP3) 30 dBm @ 900 MHz —
Besleme Gerilimi 5 V (typical, single supply) 6 V nominal (per distributor listing)
Paket SOT-89-4 (4-pin, plastic, surface mount) SOT-89-4 (3 leads + tab)
Technology InGaP Heterojunction Bipolar Transistor (HBT) —
Input Matching Internally matched to 50 ohms —
Output Matching Internally matched to 50 ohms —
Operating Class Class A, small-signal, general purpose Class A, small-signal, high linearity
Storage Temperature Range [DATA_NEEDED: storage temperature range] —
RF Input Power (max) [DATA_NEEDED: maximum RF input power rating] —
Montaj Türü Surface Mount Surface Mount
RoHS Durumu Compliant (per NXP product page) [DATA_NEEDED: RoHS status]
Tape and Reel Quantity 1,000 units per reel, 12 mm tape width, 7-inch reel (T1 = 1k) —
Process Technology — GaAs Heterostructure FET (HFET)
Typical Small-Signal Gain — 12 dB
Saturated Output Power (Psat) — 22.5 dBm
Input / Output Matching — Internally prematched
Application Categories — Cellular, PCS, ISM, WLL
MSL Seviyesi — [DATA_NEEDED: MSL rating]
İşletim Sıcaklığı — [DATA_NEEDED: operating temperature range]

Dökümanlar & Kaynaklar

Tüm Ürünleri Gözden Geçir BOM Oluştur Teklif İsteyin