MRF377HR3 vs MRF8S9170NR3 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci MRF377HR3 disebabkan oleh NXP Semiconductors dan MRF8S9170NR3 disebabkan oleh NXP Semiconductors. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

NXP Semiconductors
MRF377HR3 MRF377HR3 - 45W 470-860MHz RF Power MOSFET | NXP

MRF377HR3 - 45W 470-860MHz RF Power MOSFET | NXP

MRF377HR3 ✓ Aktif
NXP Semiconductors
MRF8S9170NR3 MRF8S9170NR3 - 50W 920-960MHz RF Power LDMOS | NXP

MRF8S9170NR3 - 50W 920-960MHz RF Power LDMOS | NXP

MRF8S9170NR3 ✓ Aktif

Pengandingan Spesifikasi

Parametr MRF377HR3 MRF8S9170NR3
Merek NXP Semiconductors NXP Semiconductors
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Jenis Transistor N-Channel Enhancement-Mode Lateral MOSFET LDMOS, N-Channel Enhancement-Mode Lateral MOSFET
Technology Lateral RF Power MOSFET (Silicon) RF Power LDMOS
Frequency Range 470 MHz to 860 MHz 920 MHz to 960 MHz
Drain-Source Voltage (V DSS) 65 V (max) —
Operating Drain Voltage 32 V (typical) —
Continuous Output Power (P out) 45 W (CW, push-pull) —
Power Gain (G ps) 18.2 dB (typical at 860 MHz) —
Drain Efficiency [DATA_NEEDED: drain efficiency %] —
Test Current 2 A —
Configuration Push-Pull (internally matched) —
Kemasan NI-860C3 (ceramic flange) OM-780-2 (ceramic flange)
Jenis Pemasangan Flange / Screw Mount (Surface Mount variant per HR3 suffix) Surface Mount / Flange Mount (bolt-down thermal pad)
Suhu Operasi -40 C to +200 C (junction) [DATA_NEEDED: Tj max and operating range from datasheet]
Storage Temperature [DATA_NEEDED: storage temperature range] —
Lead-Free / RoHS Lead Free / RoHS Compliant Lead Free (per digchip listing)
Case Connection Source —
Maximum Power Dissipation 648 W (per Partstack listing) —
Manufacturer — NXP Semiconductors
Output Power (Average, W-CDMA) — 50 W
Power Gain (Typical) — 19.3 dB at 920 MHz, 28 V, 1 A quiescent bias
Drain-Source Voltage Rating (Vdss) — 70 V
Operating Drain Voltage (Test Condition) — 28 V
Quiescent Bias Current (Idq, Test Condition) — 1 A
Drain Current (Operating) — [DATA_NEEDED: typical operating Id at 50 W Pout]
Class of Operation — Class AB, Class C (W-CDMA)
ESD Protection — [DATA_NEEDED: ESD class rating from datasheet]
Impedance Characterization — Series-equivalent large-signal impedance parameters provided
Test Conditions Note — 100% PAR tested for guaranteed output power capability

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