MRF377HR3 vs MRF8S9170NR3 Karşılaştırma

Ayrıntılı yan yana karşılaştırma MRF377HR3 tarafından NXP Semiconductors ve MRF8S9170NR3 tarafından NXP SemiconductorsAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.

NXP Semiconductors
MRF377HR3 MRF377HR3 - 45W 470-860MHz RF Power MOSFET | NXP

MRF377HR3 - 45W 470-860MHz RF Power MOSFET | NXP

MRF377HR3 ✓ Aktif
NXP Semiconductors
MRF8S9170NR3 MRF8S9170NR3 - 50W 920-960MHz RF Power LDMOS | NXP

MRF8S9170NR3 - 50W 920-960MHz RF Power LDMOS | NXP

MRF8S9170NR3 ✓ Aktif

Özellik Karşılaştırması

Parametre MRF377HR3 MRF8S9170NR3
Marka NXP Semiconductors NXP Semiconductors
Kategori MOSFETs MOSFETs
Yaşam Döngüsü Durumu Aktif Aktif
Transistor Türü N-Channel Enhancement-Mode Lateral MOSFET LDMOS, N-Channel Enhancement-Mode Lateral MOSFET
Technology Lateral RF Power MOSFET (Silicon) RF Power LDMOS
Frequency Range 470 MHz to 860 MHz 920 MHz to 960 MHz
Drain-Source Voltage (V DSS) 65 V (max) —
Operating Drain Voltage 32 V (typical) —
Continuous Output Power (P out) 45 W (CW, push-pull) —
Power Gain (G ps) 18.2 dB (typical at 860 MHz) —
Drain Efficiency [DATA_NEEDED: drain efficiency %] —
Test Current 2 A —
Configuration Push-Pull (internally matched) —
Paket NI-860C3 (ceramic flange) OM-780-2 (ceramic flange)
Montaj Türü Flange / Screw Mount (Surface Mount variant per HR3 suffix) Surface Mount / Flange Mount (bolt-down thermal pad)
İşletim Sıcaklığı -40 C to +200 C (junction) [DATA_NEEDED: Tj max and operating range from datasheet]
Storage Temperature [DATA_NEEDED: storage temperature range] —
Lead-Free / RoHS Lead Free / RoHS Compliant Lead Free (per digchip listing)
Case Connection Source —
Maximum Power Dissipation 648 W (per Partstack listing) —
Manufacturer — NXP Semiconductors
Output Power (Average, W-CDMA) — 50 W
Power Gain (Typical) — 19.3 dB at 920 MHz, 28 V, 1 A quiescent bias
Drain-Source Voltage Rating (Vdss) — 70 V
Operating Drain Voltage (Test Condition) — 28 V
Quiescent Bias Current (Idq, Test Condition) — 1 A
Drain Current (Operating) — [DATA_NEEDED: typical operating Id at 50 W Pout]
Class of Operation — Class AB, Class C (W-CDMA)
ESD Protection — [DATA_NEEDED: ESD class rating from datasheet]
Impedance Characterization — Series-equivalent large-signal impedance parameters provided
Test Conditions Note — 100% PAR tested for guaranteed output power capability

Dökümanlar & Kaynaklar

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