MRF377HR3 vs MRF8S9170NR3 比較
詳細並排比較 MRF377HR3 由 NXP Semiconductors 與 MRF8S9170NR3 由 NXP Semiconductors. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | MRF377HR3 | MRF8S9170NR3 |
|---|---|---|
| 品牌 | NXP Semiconductors | NXP Semiconductors |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 電晶體類型 | N-Channel Enhancement-Mode Lateral MOSFET | LDMOS, N-Channel Enhancement-Mode Lateral MOSFET |
| Technology | Lateral RF Power MOSFET (Silicon) | RF Power LDMOS |
| Frequency Range | 470 MHz to 860 MHz | 920 MHz to 960 MHz |
| Drain-Source Voltage (V DSS) | 65 V (max) | — |
| Operating Drain Voltage | 32 V (typical) | — |
| Continuous Output Power (P out) | 45 W (CW, push-pull) | — |
| Power Gain (G ps) | 18.2 dB (typical at 860 MHz) | — |
| Drain Efficiency | [DATA_NEEDED: drain efficiency %] | — |
| Test Current | 2 A | — |
| Configuration | Push-Pull (internally matched) | — |
| 封裝 | NI-860C3 (ceramic flange) | OM-780-2 (ceramic flange) |
| 安裝類型 | Flange / Screw Mount (Surface Mount variant per HR3 suffix) | Surface Mount / Flange Mount (bolt-down thermal pad) |
| 工作溫度 | -40 C to +200 C (junction) | [DATA_NEEDED: Tj max and operating range from datasheet] |
| Storage Temperature | [DATA_NEEDED: storage temperature range] | — |
| Lead-Free / RoHS | Lead Free / RoHS Compliant | Lead Free (per digchip listing) |
| Case Connection | Source | — |
| Maximum Power Dissipation | 648 W (per Partstack listing) | — |
| Manufacturer | — | NXP Semiconductors |
| Output Power (Average, W-CDMA) | — | 50 W |
| Power Gain (Typical) | — | 19.3 dB at 920 MHz, 28 V, 1 A quiescent bias |
| Drain-Source Voltage Rating (Vdss) | — | 70 V |
| Operating Drain Voltage (Test Condition) | — | 28 V |
| Quiescent Bias Current (Idq, Test Condition) | — | 1 A |
| Drain Current (Operating) | — | [DATA_NEEDED: typical operating Id at 50 W Pout] |
| Class of Operation | — | Class AB, Class C (W-CDMA) |
| ESD Protection | — | [DATA_NEEDED: ESD class rating from datasheet] |
| Impedance Characterization | — | Series-equivalent large-signal impedance parameters provided |
| Test Conditions Note | — | 100% PAR tested for guaranteed output power capability |