MRF6S19140HR3 vs MRF6S19140HR5 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci MRF6S19140HR3 disebabkan oleh NXP Semiconductors dan MRF6S19140HR5 disebabkan oleh NXP Semiconductors. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
NXP Semiconductors
MRF6S19140HR3 - 29W LDMOS RF MOSFET 1.93-1.99GHz | NXP Semiconductors
MRF6S19140HR3 ObsoletePengandingan Spesifikasi
| Parametr | MRF6S19140HR3 | MRF6S19140HR5 |
|---|---|---|
| Merek | NXP Semiconductors | NXP Semiconductors |
| Kategori | RF MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Obsolete | Aktif |
| Jenis Transistor | LDMOS N-Channel Enhancement-Mode Lateral MOSFET | N-Channel RF Power LDMOS |
| Frequency Range | 1.93 GHz to 1.99 GHz (1930-1990 MHz) | — |
| Drain-Source Voltage (Max Rated) | 68 V | — |
| Test Drain Voltage (Vdd) | 28 V | — |
| Test Drain Current | 1.15 A | — |
| Power Output (Pout, Avg) | 29 W | — |
| Power Gain | 16 dB (typ) | — |
| Kecocokan | [DATA_NEEDED: drain efficiency %] | — |
| Kemasan / Case | NI-880H-2L (CASE 465B-03, STYLE 1), ceramic with flange | NI-880H-2L ceramic flange |
| Kiraan Pin | 3 | — |
| Jenis Pemasangan | Chassis / Stud-Mount (ceramic flange, bolt-down thermal) | Chassis / flange mount (bolt-down) |
| Application Class | Class AB, PCN/PCS base-station, TDMA/CDMA, multi-carrier | — |
| Operating Mode | CW / pulsed RF amplifier | — |
| Original Manufacturer | Freescale Semiconductor (now NXP) | — |
| Lead / Termination Finish | Gold-plated (per datasheet case drawing) | — |
| MSL | [DATA_NEEDED: MSL rating] | — |
| Status RoHS | [DATA_NEEDED: RoHS compliance status] | [DATA_NEEDED: RoHS status] |
| HSL/R3 Suffix | R3 = 13" tape and reel | — |
| Datasheet Document | MRF6S19140H.pdf (NXP/Freescale) | — |
| Datasheet Length | 12 pages (per third-party datasheet index) | — |
| Manufacturer | — | NXP Semiconductors (formerly Freescale) |
| Drain-Source Voltage (Vdss) | — | 68 V (max) |
| Operating Drain Voltage (typical) | — | 28 V |
| Pulsed Drain Current (Id) | — | 1.15 A |
| Output Power (Pout) | — | 29 W (CW or pulsed) |
| Operating Frequency | — | 1.93 GHz to 1.99 GHz |
| Small-Signal Gain | — | 16 dB (typical) |
| Process Technology | — | HV6 LDMOS |
| Lead-Free | — | [DATA_NEEDED: lead-free status] |
| Gambaran Suhu Operasi | — | [DATA_NEEDED: operating temp range] |
| Channel-to-Flange Thermal Resistance | — | 0.45 C/W (estimated, datasheet figure) |