MRF6S19140HR3 vs MRF6S19140HR5 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng MRF6S19140HR3 sa pamamagitan ng NXP Semiconductors at MRF6S19140HR5 sa pamamagitan ng NXP Semiconductors. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
NXP Semiconductors
MRF6S19140HR3 - 29W LDMOS RF MOSFET 1.93-1.99GHz | NXP Semiconductors
MRF6S19140HR3 ObsoletePagsanggunian na paghahambing
| Parametro | MRF6S19140HR3 | MRF6S19140HR5 |
|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors |
| Kategorya | RF MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Obsolete | Aktibo |
| Uri ng Transistor | LDMOS N-Channel Enhancement-Mode Lateral MOSFET | N-Channel RF Power LDMOS |
| Frequency Range | 1.93 GHz to 1.99 GHz (1930-1990 MHz) | — |
| Drain-Source Voltage (Max Rated) | 68 V | — |
| Test Drain Voltage (Vdd) | 28 V | — |
| Test Drain Current | 1.15 A | — |
| Power Output (Pout, Avg) | 29 W | — |
| Power Gain | 16 dB (typ) | — |
| Epektibidad | [DATA_NEEDED: drain efficiency %] | — |
| Packhaging / Kaso | NI-880H-2L (CASE 465B-03, STYLE 1), ceramic with flange | NI-880H-2L ceramic flange |
| Bilang ng Pin | 3 | — |
| Uri ng Pagpapasok | Chassis / Stud-Mount (ceramic flange, bolt-down thermal) | Chassis / flange mount (bolt-down) |
| Application Class | Class AB, PCN/PCS base-station, TDMA/CDMA, multi-carrier | — |
| Operating Mode | CW / pulsed RF amplifier | — |
| Original Manufacturer | Freescale Semiconductor (now NXP) | — |
| Lead / Termination Finish | Gold-plated (per datasheet case drawing) | — |
| MSL | [DATA_NEEDED: MSL rating] | — |
| Tindminan RoHS | [DATA_NEEDED: RoHS compliance status] | [DATA_NEEDED: RoHS status] |
| HSL/R3 Suffix | R3 = 13" tape and reel | — |
| Datasheet Document | MRF6S19140H.pdf (NXP/Freescale) | — |
| Datasheet Length | 12 pages (per third-party datasheet index) | — |
| Manufacturer | — | NXP Semiconductors (formerly Freescale) |
| Drain-Source Voltage (Vdss) | — | 68 V (max) |
| Operating Drain Voltage (typical) | — | 28 V |
| Pulsed Drain Current (Id) | — | 1.15 A |
| Output Power (Pout) | — | 29 W (CW or pulsed) |
| Operating Frequency | — | 1.93 GHz to 1.99 GHz |
| Small-Signal Gain | — | 16 dB (typical) |
| Process Technology | — | HV6 LDMOS |
| Lead-Free | — | [DATA_NEEDED: lead-free status] |
| Hanay ng Temperature na Operasyon | — | [DATA_NEEDED: operating temp range] |
| Channel-to-Flange Thermal Resistance | — | 0.45 C/W (estimated, datasheet figure) |