MRF7S19100NR1 vs MRF5S19100HR5 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci MRF7S19100NR1 disebabkan oleh NXP Semiconductors dan MRF5S19100HR5 disebabkan oleh NXP Semiconductors. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

NXP Semiconductors
MRF5S19100HR5 MRF5S19100HR5 - 22W RF LDMOS 1.93-1.99GHz | NXP

MRF5S19100HR5 - 22W RF LDMOS 1.93-1.99GHz | NXP

MRF5S19100HR5 Obsolete

Pengandingan Spesifikasi

Parametr MRF7S19100NR1 MRF5S19100HR5
Merek NXP Semiconductors NXP Semiconductors
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Obsolete
Jenis Transistor LDMOS, N-Channel Enhancement-Mode Lateral MOSFET LDMOS (RF Power)
Frequency Range 1930 MHz to 1990 MHz —
Drain-Source Voltage (V(BR)DSS) min 65 V —
Drain Supply Voltage (VDD) typical 28 V —
Output Power (Pout) Avg W-CDMA 29 W —
Power Gain 17.5 dB —
Drain Current at Test (ID) 1 A —
Quiescent Current (IDQ) typical 1000 mA to 1400 mA —
Test Voltage 28 V —
Kemasan TO-270 WB-4 (Case 1486-03) Plastic —
Jenis Pemasangan Surface Mount Chassis Mount / Flange
Configuration Single, Common Source Single N-Channel
Operating Mode Class AB / Class C —
Modulation Target Single-Carrier W-CDMA (3GPP TM1 64 DPCH) —
Aras MSL [DATA_NEEDED: MSL level per JEDEC J-STD-020] —
Status RoHS [DATA_NEEDED: RoHS compliance per NXP product page] [DATA_NEEDED: rohs status]
Technology — N-Channel MOSFET
Frequency Band — 1.93 GHz to 1.99 GHz
Output Power (Pout) — 22 W
Power Gain at Test — 13.9 dB
Drain-Source Voltage Rated (Vdss) — 65 V
Test Voltage (Vd) — 28 V
Test Current (Id) — 1 A
Kemasan / Case — NI-780 (3-pin ceramic flange)
Supplier Device Package — NI-780
Part Status — Obsolete
Lead Finish — [DATA_NEEDED: lead finish]
ESD Protection — Yes (per datasheet)
Channel Temperature (Tj max) — [DATA_NEEDED: junction temp absolute maximum]

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