MRF7S19100NR1 vs MRF5S19100HR5 Vergleich

Detaillierter Direktvergleich von MRF7S19100NR1 von NXP Semiconductors und MRF5S19100HR5 von NXP Semiconductors. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

NXP Semiconductors
MRF5S19100HR5 MRF5S19100HR5 - 22W RF LDMOS 1.93-1.99GHz | NXP

MRF5S19100HR5 - 22W RF LDMOS 1.93-1.99GHz | NXP

MRF5S19100HR5 Obsolete

Spezifikationsvergleich

Parameter MRF7S19100NR1 MRF5S19100HR5
Marke NXP Semiconductors NXP Semiconductors
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Obsolete
Transistortyp LDMOS, N-Channel Enhancement-Mode Lateral MOSFET LDMOS (RF Power)
Frequency Range 1930 MHz to 1990 MHz —
Drain-Source Voltage (V(BR)DSS) min 65 V —
Drain Supply Voltage (VDD) typical 28 V —
Output Power (Pout) Avg W-CDMA 29 W —
Power Gain 17.5 dB —
Drain Current at Test (ID) 1 A —
Quiescent Current (IDQ) typical 1000 mA to 1400 mA —
Test Voltage 28 V —
Gehäuse TO-270 WB-4 (Case 1486-03) Plastic —
Montageart Surface Mount Chassis Mount / Flange
Configuration Single, Common Source Single N-Channel
Operating Mode Class AB / Class C —
Modulation Target Single-Carrier W-CDMA (3GPP TM1 64 DPCH) —
MSL-Level [DATA_NEEDED: MSL level per JEDEC J-STD-020] —
RoHS-Status [DATA_NEEDED: RoHS compliance per NXP product page] [DATA_NEEDED: rohs status]
Technology — N-Channel MOSFET
Frequency Band — 1.93 GHz to 1.99 GHz
Output Power (Pout) — 22 W
Power Gain at Test — 13.9 dB
Drain-Source Voltage Rated (Vdss) — 65 V
Test Voltage (Vd) — 28 V
Test Current (Id) — 1 A
Gehäuse / Bauform — NI-780 (3-pin ceramic flange)
Supplier Device Package — NI-780
Part Status — Obsolete
Lead Finish — [DATA_NEEDED: lead finish]
ESD Protection — Yes (per datasheet)
Channel Temperature (Tj max) — [DATA_NEEDED: junction temp absolute maximum]

Datenblätter & Ressourcen

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