MRF7S19100NR1 vs MRF5S19100HR5 对比
详细并排对比 MRF7S19100NR1 出自 NXP Semiconductors 和 MRF5S19100HR5 出自 NXP Semiconductors。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
NXP Semiconductors
MRF7S19100NR1 - 29W 1930-1990MHz RF Power LDMOS | NXP Semiconductors
MRF7S19100NR1 ✓ 量产中
规格对比
| 参数 | MRF7S19100NR1 | MRF5S19100HR5 |
|---|---|---|
| 品牌 | NXP Semiconductors | NXP Semiconductors |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | Obsolete |
| 晶体管类型 | LDMOS, N-Channel Enhancement-Mode Lateral MOSFET | LDMOS (RF Power) |
| Frequency Range | 1930 MHz to 1990 MHz | — |
| Drain-Source Voltage (V(BR)DSS) min | 65 V | — |
| Drain Supply Voltage (VDD) typical | 28 V | — |
| Output Power (Pout) Avg W-CDMA | 29 W | — |
| Power Gain | 17.5 dB | — |
| Drain Current at Test (ID) | 1 A | — |
| Quiescent Current (IDQ) typical | 1000 mA to 1400 mA | — |
| Test Voltage | 28 V | — |
| 封装 | TO-270 WB-4 (Case 1486-03) Plastic | — |
| 安装类型 | Surface Mount | Chassis Mount / Flange |
| Configuration | Single, Common Source | Single N-Channel |
| Operating Mode | Class AB / Class C | — |
| Modulation Target | Single-Carrier W-CDMA (3GPP TM1 64 DPCH) | — |
| MSL 等级 | [DATA_NEEDED: MSL level per JEDEC J-STD-020] | — |
| RoHS 状态 | [DATA_NEEDED: RoHS compliance per NXP product page] | [DATA_NEEDED: rohs status] |
| Technology | — | N-Channel MOSFET |
| Frequency Band | — | 1.93 GHz to 1.99 GHz |
| Output Power (Pout) | — | 22 W |
| Power Gain at Test | — | 13.9 dB |
| Drain-Source Voltage Rated (Vdss) | — | 65 V |
| Test Voltage (Vd) | — | 28 V |
| Test Current (Id) | — | 1 A |
| 封装 / 外壳 | — | NI-780 (3-pin ceramic flange) |
| Supplier Device Package | — | NI-780 |
| Part Status | — | Obsolete |
| Lead Finish | — | [DATA_NEEDED: lead finish] |
| ESD Protection | — | Yes (per datasheet) |
| Channel Temperature (Tj max) | — | [DATA_NEEDED: junction temp absolute maximum] |