MRFE6S9160HSR3 vs MRF8S9102NR3 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci MRFE6S9160HSR3 disebabkan oleh NXP Semiconductors dan MRF8S9102NR3 disebabkan oleh NXP Semiconductors. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | MRFE6S9160HSR3 | MRF8S9102NR3 |
|---|---|---|
| Merek | NXP Semiconductors | NXP Semiconductors |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | NXP Semiconductors (formerly Freescale) | NXP Semiconductors (formerly Freescale) |
| Part Number | MRFE6S9160HSR3 | — |
| Jenis Transistor | LDMOS, N-Channel, Enhancement-Mode, Lateral | N-Channel Lateral Enhancement-Mode MOSFET |
| Drain-Source Voltage (VDSS) | 66 V (rated) | — |
| Tegangan Pemecah Daya Kumpal-Sumber | [DATA_NEEDED: V(BR)DSS minimum] | — |
| Operating Drain Voltage (VDD) | 28 V (typical bias) | — |
| Continuous Drain Current (ID) | 10 uA [leakage spec context, ID max [DATA_NEEDED]] | — |
| Quiescent Current (IDQ) | 1200 mA | — |
| Operating Frequency Range | 865 MHz to 960 MHz | 865 MHz to 960 MHz |
| Test Frequency | 880 MHz | 920 MHz |
| Output Power (Pout) Avg. | 35 W (under N-CDMA drive, 9.8 dB PAR) | — |
| Output Power Peak | 160 W (peak envelope) | — |
| Power Gain | 21 dB (typical at 880 MHz) | — |
| Drain Efficiency | 31% (typical at 35 W avg.) | — |
| ACPR at 750 kHz Offset | -46.8 dBc | — |
| Kemasan | NI-780S (NI780HS) ceramic, bolted flange | OM-780-2 (3-pin ceramic, flange mount) |
| Jenis Pemasangan | Through-hole / chassis mount with flange | Chassis / flange mount with bolt-down thermal pad |
| Status RoHS | [DATA_NEEDED: confirm via latest distributor listing] | [DATA_NEEDED: rohs compliance] |
| Technology | HV6E (6th gen high-voltage LDMOS) | — |
| Part Family | — | MRF8S9102N / HV8 series |
| Application | — | RF Power Amplifier, W-CDMA base station |
| Drain-Source Operating Voltage (VDS) | — | 28 V (typical test condition) |
| Drain-Source Breakdown Voltage (VDSS) | — | 70 V (max) |
| Average Output Power (POUT) | — | 28 W |
| Drain Current (ID) at bias | — | 750 mA |
| Power Gain (Gp) | — | 23.1 dB |
| Modulation Format | — | Single W-CDMA (also Class AB/C capable) |
| Kiraan Pin | — | 3 |
| Operating Mode | — | Class AB or Class C |