MRFE6S9160HSR3 vs MRF8S9102NR3 Karşılaştırma
Ayrıntılı yan yana karşılaştırma MRFE6S9160HSR3 tarafından NXP Semiconductors ve MRF8S9102NR3 tarafından NXP SemiconductorsAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.
Özellik Karşılaştırması
| Parametre | MRFE6S9160HSR3 | MRF8S9102NR3 |
|---|---|---|
| Marka | NXP Semiconductors | NXP Semiconductors |
| Kategori | MOSFETs | MOSFETs |
| Yaşam Döngüsü Durumu | Aktif | Aktif |
| Manufacturer | NXP Semiconductors (formerly Freescale) | NXP Semiconductors (formerly Freescale) |
| Part Number | MRFE6S9160HSR3 | — |
| Transistor Türü | LDMOS, N-Channel, Enhancement-Mode, Lateral | N-Channel Lateral Enhancement-Mode MOSFET |
| Drain-Source Voltage (VDSS) | 66 V (rated) | — |
| Drain-Source Patlama Voltajı | [DATA_NEEDED: V(BR)DSS minimum] | — |
| Operating Drain Voltage (VDD) | 28 V (typical bias) | — |
| Continuous Drain Current (ID) | 10 uA [leakage spec context, ID max [DATA_NEEDED]] | — |
| Quiescent Current (IDQ) | 1200 mA | — |
| Operating Frequency Range | 865 MHz to 960 MHz | 865 MHz to 960 MHz |
| Test Frequency | 880 MHz | 920 MHz |
| Output Power (Pout) Avg. | 35 W (under N-CDMA drive, 9.8 dB PAR) | — |
| Output Power Peak | 160 W (peak envelope) | — |
| Power Gain | 21 dB (typical at 880 MHz) | — |
| Drain Efficiency | 31% (typical at 35 W avg.) | — |
| ACPR at 750 kHz Offset | -46.8 dBc | — |
| Paket | NI-780S (NI780HS) ceramic, bolted flange | OM-780-2 (3-pin ceramic, flange mount) |
| Montaj Türü | Through-hole / chassis mount with flange | Chassis / flange mount with bolt-down thermal pad |
| RoHS Durumu | [DATA_NEEDED: confirm via latest distributor listing] | [DATA_NEEDED: rohs compliance] |
| Technology | HV6E (6th gen high-voltage LDMOS) | — |
| Part Family | — | MRF8S9102N / HV8 series |
| Application | — | RF Power Amplifier, W-CDMA base station |
| Drain-Source Operating Voltage (VDS) | — | 28 V (typical test condition) |
| Drain-Source Breakdown Voltage (VDSS) | — | 70 V (max) |
| Average Output Power (POUT) | — | 28 W |
| Drain Current (ID) at bias | — | 750 mA |
| Power Gain (Gp) | — | 23.1 dB |
| Modulation Format | — | Single W-CDMA (also Class AB/C capable) |
| Pin Sayısı | — | 3 |
| Operating Mode | — | Class AB or Class C |