MT40A1G16TD-062E vs H5ANAG6NCJR-XN Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci MT40A1G16TD-062E disebabkan oleh Micron Technology dan H5ANAG6NCJR-XN disebabkan oleh SK hynix. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Micron Technology
MT40A1G16TD-062E MT40A1G16TD-062E - 16Gb DDR4-3200 x16 SDRAM FBGA | Micron

MT40A1G16TD-062E - 16Gb DDR4-3200 x16 SDRAM FBGA | Micron

MT40A1G16TD-062E ✓ Aktif

Pengandingan Spesifikasi

Parametr MT40A1G16TD-062E H5ANAG6NCJR-XN
Merek Micron Technology SK hynix
Kategori DRAM Memory ICs
Status Lingkungan Hidup Aktif Aktif
Jenis Ingatan DDR4 SDRAM DDR4 SDRAM
Saiz Ingatan 16 Gbit —
Organisasi 1G x 16 1G x 16
Clock Frequency 1.6 GHz —
Access Time 19 ns —
Antaramuka POD12 (1.2V pseudo open-drain) —
VDD Supply Voltage 1.2 V +/- 60 mV —
VDDQ Supply Voltage 1.2 V +/- 60 mV —
VPP Supply Voltage 2.5 V, -125 mV, +250 mV —
Bank Architecture 8 banks (x16 configuration) —
VREFDQ On-die, internal, adjustable generation —
Refresh 8192-cycle, 64 ms up to 85C; 32 ms from 85C to 95C —
Suhu Operasi TC maximum up to 95 C [DATA_NEEDED: operating temperature range]
Kemasan 96-ball FBGA (7.5 x 13 mm) FBGA-96 (96-ball)
Jenis Pemasangan Surface Mount Surface Mount (BGA)
Speed Grade -062E —
Product Line Suffix AAT:F (automotive AEC grade available per Micron catalog) —
Density — 16 Gbit (1G x 16)
Kadar Data — 3200 Mbps/pin (DDR4-3200)
Supply Voltage (VDD) — 1.14 V to 1.26 V
Package Width — 8 mm
Auto Self-Refresh — Yes
Auto Precharge — Yes
Asynchronous Reset — Yes
Data Mask (DM) — Yes
Dynamic On-Chip Termination (ODT) — Yes
ZQ Calibration — Yes
CRC (Command/Address) — Yes
Write Leveling — Yes
Maximum Standby Current — 0.074 A (per Vyrian listing)
Status RoHS — Compliant
Latensi CAS — [DATA_NEEDED: CAS latency for -XN speed grade]

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