MT40A256M16GE-083E vs H5AN4G6NBJR-PBC Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci MT40A256M16GE-083E disebabkan oleh Micron Technology dan H5AN4G6NBJR-PBC disebabkan oleh SK hynix. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Micron Technology
MT40A256M16GE-083E MT40A256M16GE-083E - DDR4 4Gb 256Mx16 2400MHz DRAM | Micron

MT40A256M16GE-083E - DDR4 4Gb 256Mx16 2400MHz DRAM | Micron

MT40A256M16GE-083E ✗ Akhir Hayat

Pengandingan Spesifikasi

Parametr MT40A256M16GE-083E H5AN4G6NBJR-PBC
Merek Micron Technology SK hynix
Kategori Memory ICs Memory ICs
Status Lingkungan Hidup Akhir Hidup Aktif
Jenis Ingatan DDR4 SDRAM DDR4 SDRAM
Density 4 Gbit —
Organisasi 256M x 16 256M x 16 (268435456 words x 16 bits)
Clock Frequency 1200 MHz (DDR4-2400) —
Tegangan Pemberi Arus 1.2 V —
Kemasan 96-ball FBGA, 9 x 14 mm FBGA-96 (PBGA96), rectangular
Jenis Pemasangan Surface Mount Surface Mount
Antaramuka Parallel DDR4 (double data rate, synchronous)
Technology CMOS DRAM —
ECCN EAR99 —
Country of Origin China —
Boson Bebas Compliant —
Lead Free Yes —
Introduction Date August 2017 —
Lifecycle Obsolete / End of Life (per distributor cross-reference data) —
Suhu Operasi [DATA_NEEDED: operating temperature range] [DATA_NEEDED: temperature range for -C grade]
Latensi CAS [DATA_NEEDED: CAS latency at DDR4-2400] [DATA_NEEDED: CAS latency for PBC speed grade]
Refresh [DATA_NEEDED: refresh rate] —
Memory Density — 4 Gbit
Supply Voltage (VDD) — 1.2 V
Package Code — TFBGA
Number of Terminals — 96
Ciri-ciri — Auto self-refresh, data mask, asynchronous reset, dynamic ODT, ZQ calibration, write leveling, CRC
Data Rate / Speed Grade — [DATA_NEEDED: speed grade PBC data rate]
Process — CMOS
Lead-Free / Halogen-Free — Yes (per family datasheet, Lead-Free & Halogen-Free)
Temperature Grade — OTHER (per distributor listing)

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