MT40A256M16GE-083E vs H5AN4G6NBJR-PBC 比較
詳細並排比較 MT40A256M16GE-083E 由 Micron Technology 與 H5AN4G6NBJR-PBC 由 SK hynix. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Micron Technology
MT40A256M16GE-083E - DDR4 4Gb 256Mx16 2400MHz DRAM | Micron
MT40A256M16GE-083E ✗ 停產規格比較
| 參數 | MT40A256M16GE-083E | H5AN4G6NBJR-PBC |
|---|---|---|
| 品牌 | Micron Technology | SK hynix |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | 停產終止 | 啟用中 |
| 記憶體類型 | DDR4 SDRAM | DDR4 SDRAM |
| Density | 4 Gbit | — |
| 組織 | 256M x 16 | 256M x 16 (268435456 words x 16 bits) |
| Clock Frequency | 1200 MHz (DDR4-2400) | — |
| 供應電壓 | 1.2 V | — |
| 封裝 | 96-ball FBGA, 9 x 14 mm | FBGA-96 (PBGA96), rectangular |
| 安裝類型 | Surface Mount | Surface Mount |
| 介面 | Parallel | DDR4 (double data rate, synchronous) |
| Technology | CMOS DRAM | — |
| ECCN | EAR99 | — |
| Country of Origin | China | — |
| 無鹵素 | Compliant | — |
| Lead Free | Yes | — |
| Introduction Date | August 2017 | — |
| Lifecycle | Obsolete / End of Life (per distributor cross-reference data) | — |
| 工作溫度 | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: temperature range for -C grade] |
| CAS 延遲 | [DATA_NEEDED: CAS latency at DDR4-2400] | [DATA_NEEDED: CAS latency for PBC speed grade] |
| Refresh | [DATA_NEEDED: refresh rate] | — |
| Memory Density | — | 4 Gbit |
| Supply Voltage (VDD) | — | 1.2 V |
| Package Code | — | TFBGA |
| Number of Terminals | — | 96 |
| 功能特色 | — | Auto self-refresh, data mask, asynchronous reset, dynamic ODT, ZQ calibration, write leveling, CRC |
| Data Rate / Speed Grade | — | [DATA_NEEDED: speed grade PBC data rate] |
| Process | — | CMOS |
| Lead-Free / Halogen-Free | — | Yes (per family datasheet, Lead-Free & Halogen-Free) |
| Temperature Grade | — | OTHER (per distributor listing) |