MT40A512M16JY-07EAIT:B vs AS4C512M16D4-75BIN Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci MT40A512M16JY-07EAIT:B disebabkan oleh Micron Technology dan AS4C512M16D4-75BIN disebabkan oleh Alliance Memory. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Micron Technology
MT40A512M16JY-07EAIT:B - 8Gb DDR4 SDRAM 512Mx16 | Micron
MT40A512M16JY-07EAIT:B ✓ AktifAlliance Memory
AS4C512M16D4-75BIN - 8Gbit DDR4 SDRAM 512Mx16 | Alliance Memory
AS4C512M16D4-75BIN ✓ AktifPengandingan Spesifikasi
| Parametr | MT40A512M16JY-07EAIT:B | AS4C512M16D4-75BIN |
|---|---|---|
| Merek | Micron Technology | Alliance Memory |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | DDR4 SDRAM | DDR4 SDRAM |
| Saiz Ingatan | 8 Gbit | 8 Gbit |
| Organisasi | 512M x 16 | — |
| Clock Frequency | 1.33 GHz | 1.333 GHz |
| Kadar Data | 2666 MT/s | 2666 Mbps |
| Supply Voltage (VDD/VDDQ) | 1.2V ±60mV | — |
| VPP Voltage | 2.5V, -125mV, +250mV | — |
| Antaramuka | Parallel | POD |
| Kemasan | 96-FBGA (8x14) | 96-FBGA (7.5x13) |
| Gambaran Suhu Operasi | -40°C to +105°C (AIT grade) | — |
| Refresh Time | 64ms at -40°C to 85°C, 32ms at >85°C to 95°C, 16ms at >95°C to 105°C | — |
| I/O Type | 1.2V pseudo open-drain | — |
| VREFDQ | On-die, internal, adjustable | — |
| AEC-Q100 | Qualified (AIT suffix) | — |
| RoHS | Compliant | — |
| Memory Organization | — | 512M x 16 |
| Access Time | — | 18 ns |
| Write Cycle Time | — | 15 ns |
| Tegangan Pemberi Arus | — | 1.2 V |
| Suhu Operasi | — | -40°C to +95°C |
| Jenis Pemasangan | — | Surface Mount |
| Bilangan Pin | — | 96 |
| Status RoHS | — | Compliant |
| Ciri-ciri | — | Auto self-refresh, auto precharge, asynchronous reset, output enable, CRC, data mask, write leveling, dynamic ODT, ZQ calibration |