MT40A512M8RH-083E vs H5AN4G8NBJR-UHC Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci MT40A512M8RH-083E disebabkan oleh Micron Technology dan H5AN4G8NBJR-UHC disebabkan oleh SK hynix. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | MT40A512M8RH-083E | H5AN4G8NBJR-UHC |
|---|---|---|
| Merek | Micron Technology | SK hynix |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | DDR4 SDRAM | DDR4 SDRAM |
| Density | 4 Gbit | 4 Gbit |
| Organisasi | 512M x 8 | 512M x 8 |
| Industry Speed Grade | DDR4-2400 | — |
| Clock Rate | 1.2 GHz | — |
| Internal Banks | 8 banks (2 groups of 4) | — |
| Prefetch | 8n-bit | — |
| Refresh | 64 ms, 8192-cycle refresh (to 95C) | [DATA_NEEDED: refresh rate 1x/2x/4x support] |
| VDD / VDDQ | 1.2 V +/-60 mV | — |
| VPP | 2.5 V, -125 mV/+250 mV | — |
| I/O Structure | 1.2 V pseudo open-drain | — |
| VREFDQ | On-die internal, adjustable generation | — |
| Suhu Operasi | 0C to +95C | [DATA_NEEDED: operating temperature range] |
| Kemasan | 78-ball FBGA (9 x 10.5 mm) | TFBGA-78 (11 x 7.5 mm) |
| FBGA Code | D9TGG | — |
| Marking Code | D9TGG | — |
| Data Strobe Preamble | Programmable | — |
| Status RoHS | Compliant | Compliant (Rohs Code: Yes) |
| Latensi CAS | [DATA_NEEDED: CAS latency per speed bin table] | [DATA_NEEDED: CAS latency for -UHC speed bin] |
| Kadar Data | — | 2400 Mbps (PC2400) |
| Tegangan Pemberi Arus | — | 1.2 V |
| Antaramuka | — | DDR4 (JEDEC) |
| Jenis Pemasangan | — | Surface Mount |
| Technology | — | CMOS DRAM |
| Lifecycle Code | — | Active |
| REACH Compliance | — | Compliant |
| Manufacturer | — | SK Hynix Inc. |