MT40A512M8RH-083E vs H5AN4G8NBJR-UHC Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng MT40A512M8RH-083E sa pamamagitan ng Micron Technology at H5AN4G8NBJR-UHC sa pamamagitan ng SK hynix. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Micron Technology
MT40A512M8RH-083E - 4Gb DDR4 512Mx8 2400MHz | Micron
MT40A512M8RH-083E ✓ NakahandaPagsanggunian na paghahambing
| Parametro | MT40A512M8RH-083E | H5AN4G8NBJR-UHC |
|---|---|---|
| Brand | Micron Technology | SK hynix |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Memory | DDR4 SDRAM | DDR4 SDRAM |
| Density | 4 Gbit | 4 Gbit |
| Organisasyon | 512M x 8 | 512M x 8 |
| Industry Speed Grade | DDR4-2400 | — |
| Clock Rate | 1.2 GHz | — |
| Internal Banks | 8 banks (2 groups of 4) | — |
| Prefetch | 8n-bit | — |
| Refresh | 64 ms, 8192-cycle refresh (to 95C) | [DATA_NEEDED: refresh rate 1x/2x/4x support] |
| VDD / VDDQ | 1.2 V +/-60 mV | — |
| VPP | 2.5 V, -125 mV/+250 mV | — |
| I/O Structure | 1.2 V pseudo open-drain | — |
| VREFDQ | On-die internal, adjustable generation | — |
| Temperature na Operasyon | 0C to +95C | [DATA_NEEDED: operating temperature range] |
| Packhaging | 78-ball FBGA (9 x 10.5 mm) | TFBGA-78 (11 x 7.5 mm) |
| FBGA Code | D9TGG | — |
| Marking Code | D9TGG | — |
| Data Strobe Preamble | Programmable | — |
| Tindminan RoHS | Compliant | Compliant (Rohs Code: Yes) |
| Latensya ng CAS | [DATA_NEEDED: CAS latency per speed bin table] | [DATA_NEEDED: CAS latency for -UHC speed bin] |
| Rate ng Data | — | 2400 Mbps (PC2400) |
| Volte ng Pagbibigay | — | 1.2 V |
| Interface | — | DDR4 (JEDEC) |
| Uri ng Pagpapasok | — | Surface Mount |
| Technology | — | CMOS DRAM |
| Lifecycle Code | — | Active |
| REACH Compliance | — | Compliant |
| Manufacturer | — | SK Hynix Inc. |