MT41K256M16HA-15EM:E vs K4B4G1646D-BYK00 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci MT41K256M16HA-15EM:E disebabkan oleh Micron Technology dan K4B4G1646D-BYK00 disebabkan oleh Samsung Electronics. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Micron Technology
MT41K256M16HA-15EM:E - 4Gb DDR3L SDRAM 256Mx16 | Micron
MT41K256M16HA-15EM:E ✓ AktifSamsung Electronics
K4B4G1646D-BYK00 - 4Gb DDR3L SDRAM 256Mx16 96FBGA | Samsung
K4B4G1646D-BYK00 ✓ AktifPengandingan Spesifikasi
| Parametr | MT41K256M16HA-15EM:E | K4B4G1646D-BYK00 |
|---|---|---|
| Merek | Micron Technology | Samsung Electronics |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | DDR3L SDRAM | DDR3L SDRAM |
| Density | 4 Gbit | 4 Gb |
| Organisasi | 256M x 16 | 256M x 16 |
| Tegangan Pemberi Arus | 1.35 V (1.5V compatible) | 1.35 V (also operates at 1.5 V) |
| Kadar Data | 1333 Mbps (DDR3L-1333) | 1600 Mbps |
| Latensi CAS | 15 | Programmable |
| Kemasan | 96-ball FBGA (9x14mm) | 96-ball TFBGA |
| Jenis Pemasangan | Surface Mount | — |
| Suhu Operasi | [DATA_NEEDED: operating temperature range] | 0°C to 85°C |
| Status RoHS | Compliant | — |
| Lead-Free | Yes | Yes |
| Bilangan Pin | 96 | — |
| Access Time | 13.75 ns | — |
| Clock Frequency | 800 MHz | — |
| Antaramuka | Parallel | — |
| Number of Terminals | — | 96 |
| Additional Features | — | Auto precharge, asynchronous reset, ZQ calibration, data mask, dynamic on-chip termination |
| RoHS | — | Compliant |
| Boson Bebas | — | Yes |
| Package Shape | — | RECTANGULAR |
| Temperature Grade | — | OTHER |