MT53E2G64D8TN-046 vs H58G56AK6QX032N Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci MT53E2G64D8TN-046 disebabkan oleh Micron Technology dan H58G56AK6QX032N disebabkan oleh SK hynix. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Micron Technology
MT53E2G64D8TN-046 MT53E2G64D8TN-046 - 128Gbit LPDDR4X SDRAM 556-Ball | Micron

MT53E2G64D8TN-046 - 128Gbit LPDDR4X SDRAM 556-Ball | Micron

MT53E2G64D8TN-046 ✓ Aktif

Pengandingan Spesifikasi

Parametr MT53E2G64D8TN-046 H58G56AK6QX032N
Merek Micron Technology SK hynix
Kategori Memory ICs Memory ICs
Status Lingkungan Hidup Aktif Aktif
Jenis Ingatan Mobile LPDDR4X SDRAM LPDDR5 SDRAM
Saiz Ingatan 128 Gbit (16 GB) —
Organisasi 2G x 64 512M x 64
Antaramuka Parallel —
Clock Frequency 2.133 GHz —
Access Time 3.5 ns —
Speed Grade -046 (4266 Mbps/pin) —
Supply Voltage (VDD) 1.1 V / 1.8 V (per variant) —
Kemasan 556-ball LFBGA (12.4 mm x 12.4 mm) FBGA-315
Ball Pitch [DATA_NEEDED: ball pitch] —
Jenis Pemasangan Surface Mount Surface Mount
Operating Temperature (AAT:C) 0C to +95C —
Operating Temperature (AIT:C) -40C to +95C —
Operating Temperature (AUT:C) -40C to +105C —
Automotive Qualification (AUT variant) AEC-Q100 qualified —
Lebar Bus Data 64 bit —
Write Cycle Time 18 ns —
Status RoHS [DATA_NEEDED: RoHS status] [DATA_NEEDED: RoHS status]
Density — 32Gb (4GB)
Kadar Data — 6400 Mbps per pin
Bus Width — x16 (x64 variant per sourcing data)
Core Voltage (VDD) — 0.5 V
I/O Voltage (VDDQ) — 0.5 V
Interface Voltage (VDD2) — 1.8 V / 1.05 V
Grade — Automotive
Applications — Data storage, firmware boot, embedded logging, industrial controllers, computing modules
Standard — JEDEC LPDDR5
Suhu Operasi — [DATA_NEEDED: operating temperature range]
Reflow/MSL Rating — [DATA_NEEDED: MSL level]

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