MW7IC2240NBR1 vs MW7IC2220NBR1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci MW7IC2240NBR1 disebabkan oleh NXP Semiconductors dan MW7IC2220NBR1 disebabkan oleh NXP Semiconductors. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

NXP Semiconductors
MW7IC2240NBR1 MW7IC2240NBR1 - 4W W-CDMA RF LDMOS Power Amplifier | NXP

MW7IC2240NBR1 - 4W W-CDMA RF LDMOS Power Amplifier | NXP

MW7IC2240NBR1 Obsolete
NXP Semiconductors
MW7IC2220NBR1 MW7IC2220NBR1 - 2W W-CDMA RF Power Amplifier 2.11-2.17 GHz | NXP

MW7IC2220NBR1 - 2W W-CDMA RF Power Amplifier 2.11-2.17 GHz | NXP

MW7IC2220NBR1 ✓ Aktif

Pengandingan Spesifikasi

Parametr MW7IC2240NBR1 MW7IC2220NBR1
Merek NXP Semiconductors NXP Semiconductors
Kategori RF Amplifiers RF Amplifiers
Status Lingkungan Hidup Obsolete Aktif
Frequency Range 2110 MHz to 2170 MHz (usable 2000-2200 MHz) 2000 MHz to 2200 MHz (usable), 2110-2170 MHz (W-CDMA band)
Modulation / RF Type W-CDMA (also TD-SCDMA, LTE) —
Output Power (Average) 4 W Avg. @ 2112.5 MHz, single-carrier W-CDMA —
Supply Voltage (VDD) 28 V (rated 24 V to 32 V operation) —
Quiescent Current Stage 1 (IDQ1) 90 mA 80 mA
Quiescent Current Stage 2 (IDQ2) 420 mA 300 mA
Minimum Gain 15 dB (typical 30 dB) —
Input VSWR 5:1 —
Output VSWR 5:1 —
Nominal Impedance 50 ohm (on-chip matched) —
P1dB (Output) 46 dBm (per distributor listing) —
Technology RF LDMOS (multi-stage integrated) RF LDMOS (Laterally Diffused MOSFET)
Kemasan TO-272 WB-16 (over-molded plastic, 16-lead) —
Jenis Pemasangan Surface Mount Surface Mount (flange/over-molded)
Terminal Finish Matte Tin (Sn) —
Package Body Material Plastic / Epoxy —
Operating Mode 100% PAR tested for W-CDMA-like signals —
Status RoHS [DATA_NEEDED: RoHS compliance] —
Fungsi — W-CDMA Wideband Integrated Power Amplifier
Operating Frequency (typical) — 2167.5 MHz
Average Output Power — 2 W (33 dBm)
Drain Supply Voltage (VDD) — 28 V (24 V to 32 V operating range)
Small-Signal Gain — 31 dB (typical at 2.17 GHz)
Package Type — TO-272WB-16 (over-molded plastic)
Input Matching — On-chip (50 ohm nominal)
Output Matching — On-chip (50 ohm nominal)
Characteristic Impedance — 50 ohm
Maximum Operating Temperature — 150 C
Modulation Support — W-CDMA, TD-SCDMA, LTE, multi-carrier
Test Signal — Single-Carrier W-CDMA, IQ Magnitude Clipping, PAR = 7.5 dB
ACPR Measurement — 3.84 MHz channel bandwidth at +/-5 MHz offset

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