MW7IC2240NBR1 vs MW7IC2220NBR1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng MW7IC2240NBR1 sa pamamagitan ng NXP Semiconductors at MW7IC2220NBR1 sa pamamagitan ng NXP Semiconductors. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
NXP Semiconductors
MW7IC2220NBR1 - 2W W-CDMA RF Power Amplifier 2.11-2.17 GHz | NXP
MW7IC2220NBR1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | MW7IC2240NBR1 | MW7IC2220NBR1 |
|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors |
| Kategorya | RF Amplifiers | RF Amplifiers |
| Katayuan ng Lifecycle | Obsolete | Aktibo |
| Frequency Range | 2110 MHz to 2170 MHz (usable 2000-2200 MHz) | 2000 MHz to 2200 MHz (usable), 2110-2170 MHz (W-CDMA band) |
| Modulation / RF Type | W-CDMA (also TD-SCDMA, LTE) | — |
| Output Power (Average) | 4 W Avg. @ 2112.5 MHz, single-carrier W-CDMA | — |
| Supply Voltage (VDD) | 28 V (rated 24 V to 32 V operation) | — |
| Quiescent Current Stage 1 (IDQ1) | 90 mA | 80 mA |
| Quiescent Current Stage 2 (IDQ2) | 420 mA | 300 mA |
| Minimum Gain | 15 dB (typical 30 dB) | — |
| Input VSWR | 5:1 | — |
| Output VSWR | 5:1 | — |
| Nominal Impedance | 50 ohm (on-chip matched) | — |
| P1dB (Output) | 46 dBm (per distributor listing) | — |
| Technology | RF LDMOS (multi-stage integrated) | RF LDMOS (Laterally Diffused MOSFET) |
| Packhaging | TO-272 WB-16 (over-molded plastic, 16-lead) | — |
| Uri ng Pagpapasok | Surface Mount | Surface Mount (flange/over-molded) |
| Terminal Finish | Matte Tin (Sn) | — |
| Package Body Material | Plastic / Epoxy | — |
| Operating Mode | 100% PAR tested for W-CDMA-like signals | — |
| Tindminan RoHS | [DATA_NEEDED: RoHS compliance] | — |
| Fungsi | — | W-CDMA Wideband Integrated Power Amplifier |
| Operating Frequency (typical) | — | 2167.5 MHz |
| Average Output Power | — | 2 W (33 dBm) |
| Drain Supply Voltage (VDD) | — | 28 V (24 V to 32 V operating range) |
| Small-Signal Gain | — | 31 dB (typical at 2.17 GHz) |
| Package Type | — | TO-272WB-16 (over-molded plastic) |
| Input Matching | — | On-chip (50 ohm nominal) |
| Output Matching | — | On-chip (50 ohm nominal) |
| Characteristic Impedance | — | 50 ohm |
| Maximum Operating Temperature | — | 150 C |
| Modulation Support | — | W-CDMA, TD-SCDMA, LTE, multi-carrier |
| Test Signal | — | Single-Carrier W-CDMA, IQ Magnitude Clipping, PAR = 7.5 dB |
| ACPR Measurement | — | 3.84 MHz channel bandwidth at +/-5 MHz offset |