N25Q256A13E12A0F vs N25Q032A13EV7A0 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci N25Q256A13E12A0F disebabkan oleh Micron Technology dan N25Q032A13EV7A0 disebabkan oleh Micron Technology. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | N25Q256A13E12A0F | N25Q032A13EV7A0 |
|---|---|---|
| Merek | Micron Technology | Micron Technology |
| Kategori | Memory ICs | EEPROM |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | NOR Flash, Serial SPI | NOR Flash (SPI) |
| Density | 256 Mbit (32 MB) | 32 Mbit (4 MB) |
| Organisasi | 64M x 4 (Mouser listing); 32M x 8 per FindIC listing - see validation note | 8M x 4 die |
| Tegangan Pemberi Arus | 2.7 V to 3.6 V | 2.7 V to 3.6 V |
| Max SPI Clock Frequency | 108 MHz | — |
| I/O Modes | Single, Dual, Quad I/O (Multiple I/O Serial Flash) | — |
| Technology | SLC (Single-Level Cell) | — |
| Sector Erase Size | 4 KB | — |
| Kemasan | 24-ball T-PBGA (6x8 mm) | VDFPN8 (8-lead MLP8) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Suhu Operasi | -40C to +125C | -40C to +125C |
| Access Time | 8 ns (per FindIC listing) | [DATA_NEEDED: read access time] |
| Status RoHS | Compliant | [DATA_NEEDED: RoHS status] |
| Packaging | Tape & Reel (TR suffix) | Tape & Reel (tray options may exist) |
| Program/Erase Endurance | [DATA_NEEDED: program/erase endurance cycles] | — |
| Data Retention | [DATA_NEEDED: data retention years] | — |
| Active Read Current | [DATA_NEEDED: ICC read current] | — |
| Standby Current | [DATA_NEEDED: ICC standby current] | — |
| Antaramuka | — | SPI |
| Max Clock Frequency | — | 108 MHz |
| Memory Format | — | Flash (NOR) |
| Write Cycle Endurance | — | [DATA_NEEDED: endurance cycles] |
| Program/Erase Modes | — | Page program, sector erase, bulk erase |
| Aras MSL | — | [DATA_NEEDED: MSL] |