NT5AD512M16B4-HR vs MT40A512M16TB-062E:J Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci NT5AD512M16B4-HR disebabkan oleh Nanya Technology dan MT40A512M16TB-062E:J disebabkan oleh Micron Technology. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Micron Technology
MT40A512M16TB-062E:J - 8Gb DDR4 SDRAM 1.6GHz | Micron
MT40A512M16TB-062E:J ✓ AktifPengandingan Spesifikasi
| Parametr | NT5AD512M16B4-HR | MT40A512M16TB-062E:J |
|---|---|---|
| Merek | Nanya Technology | Micron Technology |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | DDR4 SDRAM | SDRAM - DDR4 |
| Density | 8Gb | — |
| Organisasi | 512M x 16 | — |
| Tegangan Pemberi Arus | 1.2V | — |
| Kemasan | 96-ball TFBGA | 96-FBGA (7.5x13.5 mm) |
| Temperature Range | 0°C to +95°C | — |
| Kadar Data | 3200 Mbps | — |
| Auto Self-Refresh | Yes | — |
| Built-in Temperature Sensor | Yes | — |
| Auto Precharge | Yes | — |
| Asynchronous Reset | Yes | — |
| Data Mask | Yes | — |
| Write Leveling | Yes | — |
| Dynamic On-Chip Termination | Yes | — |
| ZQ Calibration | Yes | — |
| CRC Function | Yes | — |
| RoHS | Compliant | — |
| Saiz Ingatan | — | 8Gbit (512M x 16) |
| Clock Frequency | — | 1.6 GHz |
| Access Time | — | 19 ns |
| Supply Voltage (VDD/VDDQ) | — | 1.2V ±60mV |
| VPP Supply Voltage | — | 2.5V (-125mV, +250mV) |
| I/O Type | — | 1.2V pseudo open-drain |
| Refresh Time | — | 64ms at -40°C to 85°C; 32ms at >85°C to 95°C; 16ms at >95°C |
| Internal Banks (x16) | — | 8 (2 groups of 4 banks each) |
| Prefetch Architecture | — | 8n-bit |
| Gambaran Suhu Operasi | — | 0°C to 95°C |
| Status RoHS | — | Compliant |
| Lead-Free | — | Yes |
| Jenis Pemasangan | — | Surface Mount |