NT5AD512M16B4-HR vs MT40A512M16TB-062E:J Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng NT5AD512M16B4-HR sa pamamagitan ng Nanya Technology at MT40A512M16TB-062E:J sa pamamagitan ng Micron Technology. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Nanya Technology
NT5AD512M16B4-HR - 8Gb DDR4 SDRAM 512Mx16 1.2V | Nanya
NT5AD512M16B4-HR ✓ NakahandaMicron Technology
MT40A512M16TB-062E:J - 8Gb DDR4 SDRAM 1.6GHz | Micron
MT40A512M16TB-062E:J ✓ NakahandaPagsanggunian na paghahambing
| Parametro | NT5AD512M16B4-HR | MT40A512M16TB-062E:J |
|---|---|---|
| Brand | Nanya Technology | Micron Technology |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Memory | DDR4 SDRAM | SDRAM - DDR4 |
| Density | 8Gb | — |
| Organisasyon | 512M x 16 | — |
| Volte ng Pagbibigay | 1.2V | — |
| Packhaging | 96-ball TFBGA | 96-FBGA (7.5x13.5 mm) |
| Temperature Range | 0°C to +95°C | — |
| Rate ng Data | 3200 Mbps | — |
| Auto Self-Refresh | Yes | — |
| Built-in Temperature Sensor | Yes | — |
| Auto Precharge | Yes | — |
| Asynchronous Reset | Yes | — |
| Data Mask | Yes | — |
| Write Leveling | Yes | — |
| Dynamic On-Chip Termination | Yes | — |
| ZQ Calibration | Yes | — |
| CRC Function | Yes | — |
| RoHS | Compliant | — |
| Laki ng Memory | — | 8Gbit (512M x 16) |
| Clock Frequency | — | 1.6 GHz |
| Access Time | — | 19 ns |
| Supply Voltage (VDD/VDDQ) | — | 1.2V ±60mV |
| VPP Supply Voltage | — | 2.5V (-125mV, +250mV) |
| I/O Type | — | 1.2V pseudo open-drain |
| Refresh Time | — | 64ms at -40°C to 85°C; 32ms at >85°C to 95°C; 16ms at >95°C |
| Internal Banks (x16) | — | 8 (2 groups of 4 banks each) |
| Prefetch Architecture | — | 8n-bit |
| Hanay ng Temperature na Operasyon | — | 0°C to 95°C |
| Tindminan RoHS | — | Compliant |
| Lead-Free | — | Yes |
| Uri ng Pagpapasok | — | Surface Mount |