NT5CB256M16CP-DI vs NT5CB256M16CP-DIH Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci NT5CB256M16CP-DI disebabkan oleh Nanya Technology dan NT5CB256M16CP-DIH disebabkan oleh Nanya Technology. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | NT5CB256M16CP-DI | NT5CB256M16CP-DIH |
|---|---|---|
| Merek | Nanya Technology | Nanya Technology |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | DDR3L SDRAM | DDR3L SDRAM |
| Organisasi | 256M x 16 | 256M x 16 |
| Density | 4 Gb | 4Gb |
| Tegangan Pemberi Arus | 1.35 V (DDR3L) | — |
| Kadar Data | 1600 Mbps/pin (max) | 1600Mbps (DDR3L-1600) |
| Kemasan | TFBGA-96 | 96-ball TFBGA |
| Number of Banks | 8 | — |
| CAS Latency (CL) | 5, 6, 7, 8, 9, 10, 11 | 5, 6, 7, 8, 9 |
| Write Latency (CWL) | 5, 6, 7, 8, 9 | — |
| Additive Latency | 0-13 | — |
| Gambaran Suhu Operasi | -40°C to +95°C (industrial), -40°C to +105°C (automotive) | — |
| RoHS | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| Differential Clock Input | Yes (CK, CK#) | — |
| On-Die Termination (ODT) | Yes | — |
| Supply Voltage (VDD/VDDQ) | — | 1.35V (±0.075V) |
| Internal Banks | — | 8 (BA0-BA2) |
| WRITE Latency (CWL) | — | 5, 6, 7, 8, 9 |
| Antaramuka | — | SSTL_15 |
| Suhu Operasi | — | -40°C to +95°C (industrial) |
| REACH | — | Compliant |
| Process Technology | — | 70nm |