NVMFS5C430NWF vs BSC014N04LSIATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci NVMFS5C430NWF disebabkan oleh onsemi dan BSC014N04LSIATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | NVMFS5C430NWF | BSC014N04LSIATMA1 |
|---|---|---|
| Merek | onsemi | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Transistor | N-Channel Power MOSFET | — |
| Drain-Source Voltage (VDS) | 40 V | 40 V |
| Continuous Drain Current (ID) | 185 A | — |
| RDS(on) Max @ VGS=10V | [DATA_NEEDED: RDS(on) max at VGS=10V] | — |
| RDS(on) Typical | 1.7 mΩ | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | — |
| Total Gate Charge (QG) | [DATA_NEEDED: total QG] | — |
| Kemasan | DFN5 (5x6 mm) with Wettable Flanks | PG-TDSON-8 FL (TDSON-8 with exposed drain pad) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Gambaran Suhu Operasi | [DATA_NEEDED: operating temperature range] | -55 C to +150 C |
| AEC-Q101 Qualified | Yes | — |
| PPAP Capable | Yes | — |
| RoHS Compliance | Compliant | — |
| Lead-Free / Halogen-Free | Pb-Free (Halogen status not in data) | — |
| Footprint | 5x6 mm Small Outline | — |
| Technology | Trench Power MOSFET | OptiMOS 5 (trench, thin-wafer) |
| Aras MSL | [DATA_NEEDED: MSL rating] | 1 (per JEDEC J-STD-020) |
| FET Type | — | N-Channel |
| Continuous Drain Current (ID, Tc) | — | 100 A |
| Continuous Drain Current (ID, Ta) | — | 31 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed IDM rating] |
| RDS(on) max at VGS=10 V | — | 1.4 mOhm |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS absolute maximum] |
| Gate Threshold Voltage (VGS(th) typ) | — | [DATA_NEEDED: VGS(th) typical] |
| Power Dissipation (PD, Tc) | — | 96 W |
| Power Dissipation (PD, Ta) | — | 2.5 W |
| Status RoHS | — | Compliant |
| Tradename | — | OptiMOS |