STB80NF55-08AG vs STB80NF55-06T4 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci STB80NF55-08AG disebabkan oleh STMicroelectronics dan STB80NF55-06T4 disebabkan oleh STMicroelectronics. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
STMicroelectronics
STB80NF55-08AG - 55V 80A Automotive N-Channel MOSFET | STMicroelectronics
STB80NF55-08AG ✓ AktifSTMicroelectronics
STB80NF55-06T4 - 80A, 55V N-Channel Power MOSFET | STMicroelectronics
STB80NF55-06T4 ✓ AktifPengandingan Spesifikasi
| Parametr | STB80NF55-08AG | STB80NF55-06T4 |
|---|---|---|
| Merek | STMicroelectronics | STMicroelectronics |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Polarity | N-Channel | N-Channel |
| Drain-to-Source Voltage (VDS) | 55 V | — |
| Continuous Drain Current (ID) | 80 A (Tc) | — |
| On-Resistance (RDS(on)) | 6.5 mΩ typ | — |
| Power Dissipation (PD) | 300 W (Tc) | 300 W |
| Gate Charge (Qg) | [DATA_NEEDED: gate charge value] | 80 nC (typ) |
| Input Capacitance (Ciss) | [DATA_NEEDED: input capacitance value] | 4500 pF (typ) |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: gate threshold voltage value] | — |
| Avalanche Energy (EAS) | 100% avalanche tested | — |
| Gambaran Suhu Operasi | -55°C to +175°C | -55°C to +175°C |
| Kemasan | D2PAK (TO-263) | D2PAK (TO-263) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Automotive Grade | AEC-Q101 qualified | — |
| Status RoHS | Compliant | Compliant |
| Technology | STripFET | — |
| Drain-Source Voltage (VDS) | — | 55 V |
| Continuous Drain Current (ID) at 25°C | — | 80 A |
| Continuous Drain Current (ID) at 100°C | — | 56 A |
| Pulsed Drain Current (IDM) | — | 320 A |
| Gate-Source Voltage (VGS) | — | ±20 V |
| On-Resistance (RDS(on)) at VGS=10V | — | 6.5 mΩ (typ), 8 mΩ (max) |
| Output Capacitance (Coss) | — | 700 pF (typ) |
| Reverse Transfer Capacitance (Crss) | — | 250 pF (typ) |
| Boson Bebas | — | Yes |