STL80N4LLF3 vs BSC0901NSATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci STL80N4LLF3 disebabkan oleh STMicroelectronics dan BSC0901NSATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | STL80N4LLF3 | BSC0901NSATMA1 |
|---|---|---|
| Merek | STMicroelectronics | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | N-Channel | — |
| Technology | STripFET (trench MOSFET) | N-Channel Trench MOSFET (OptiMOS) |
| Drain-Source Voltage (VDS) | 40 V | — |
| Continuous Drain Current (ID) at Tc | 80 A | 100 A |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | — |
| On-Resistance RDS(on) max at VGS=10 V | 4.2 mOhm (typ from manufacturer line; see notes) | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max] | — |
| Gate Threshold Voltage VGS(th) typ | [DATA_NEEDED: VGS(th) typ] | — |
| Total Gate Charge (Qg) typ | [DATA_NEEDED: Qg typ] | — |
| Power Dissipation (PD) at Tc | 80 W | 69 W |
| Gambaran Suhu Operasi | -55C to +175C (typical ST PowerFLAT MOSFET range) | -55C to +150C |
| Kemasan | PowerFLAT (5x6) - 8-Pin VDFN exposed pad | TDSON-8-5 (PG-TDSON-8-5) / SuperSO8 5x6 mm |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Aras MSL | 1 (per JEDEC J-STD-020) | — |
| Status RoHS | Compliant | Compliant |
| Avalanche Rated | Yes (100% Rg2-T tested per ST datasheet) | — |
| Manufacturer | — | Infineon Technologies |
| Part Family | — | OptiMOS 30V |
| Drain-to-Source Voltage (VDS) Max | — | 30 V |
| Continuous Drain Current (ID) at Ta | — | 28 A |
| On-State Resistance RDS(on) Max at VGS=10V | — | 1.9 mOhm |
| On-State Resistance RDS(on) Typ at VGS=10V | — | [DATA_NEEDED: RDS(on) typical] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th)] |
| Gate Charge (Qg) Typ | — | [DATA_NEEDED: Qg total] |
| Avalanche Energy (EAS) | — | 80 mJ |
| Power Dissipation (PD) at Ta | — | 2.5 W |
| Tingkat sensitiviti Air Nama (MSL) | — | 1 |
| Built-in Body Diode | — | Yes |
| Configuration | — | Single N-Channel with Built-in Diode |