STL80N4LLF3 vs BSC0901NSATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng STL80N4LLF3 sa pamamagitan ng STMicroelectronics at BSC0901NSATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | STL80N4LLF3 | BSC0901NSATMA1 |
|---|---|---|
| Brand | STMicroelectronics | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| FET Type | N-Channel | — |
| Technology | STripFET (trench MOSFET) | N-Channel Trench MOSFET (OptiMOS) |
| Drain-Source Voltage (VDS) | 40 V | — |
| Continuous Drain Current (ID) at Tc | 80 A | 100 A |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | — |
| On-Resistance RDS(on) max at VGS=10 V | 4.2 mOhm (typ from manufacturer line; see notes) | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max] | — |
| Gate Threshold Voltage VGS(th) typ | [DATA_NEEDED: VGS(th) typ] | — |
| Total Gate Charge (Qg) typ | [DATA_NEEDED: Qg typ] | — |
| Power Dissipation (PD) at Tc | 80 W | 69 W |
| Hanay ng Temperature na Operasyon | -55C to +175C (typical ST PowerFLAT MOSFET range) | -55C to +150C |
| Packhaging | PowerFLAT (5x6) - 8-Pin VDFN exposed pad | TDSON-8-5 (PG-TDSON-8-5) / SuperSO8 5x6 mm |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Level ng MSL | 1 (per JEDEC J-STD-020) | — |
| Tindminan RoHS | Compliant | Compliant |
| Avalanche Rated | Yes (100% Rg2-T tested per ST datasheet) | — |
| Manufacturer | — | Infineon Technologies |
| Part Family | — | OptiMOS 30V |
| Drain-to-Source Voltage (VDS) Max | — | 30 V |
| Continuous Drain Current (ID) at Ta | — | 28 A |
| On-State Resistance RDS(on) Max at VGS=10V | — | 1.9 mOhm |
| On-State Resistance RDS(on) Typ at VGS=10V | — | [DATA_NEEDED: RDS(on) typical] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th)] |
| Gate Charge (Qg) Typ | — | [DATA_NEEDED: Qg total] |
| Avalanche Energy (EAS) | — | 80 mJ |
| Power Dissipation (PD) at Ta | — | 2.5 W |
| Level ng Sensitivity sa Asid ng Moisture (MSL) | — | 1 |
| Built-in Body Diode | — | Yes |
| Configuration | — | Single N-Channel with Built-in Diode |