STL80N4LLF3 vs BSC0901NSATMA1 比較
詳細並排比較 STL80N4LLF3 由 STMicroelectronics 與 BSC0901NSATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | STL80N4LLF3 | BSC0901NSATMA1 |
|---|---|---|
| 品牌 | STMicroelectronics | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| FET Type | N-Channel | — |
| Technology | STripFET (trench MOSFET) | N-Channel Trench MOSFET (OptiMOS) |
| Drain-Source Voltage (VDS) | 40 V | — |
| Continuous Drain Current (ID) at Tc | 80 A | 100 A |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | — |
| On-Resistance RDS(on) max at VGS=10 V | 4.2 mOhm (typ from manufacturer line; see notes) | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max] | — |
| Gate Threshold Voltage VGS(th) typ | [DATA_NEEDED: VGS(th) typ] | — |
| Total Gate Charge (Qg) typ | [DATA_NEEDED: Qg typ] | — |
| Power Dissipation (PD) at Tc | 80 W | 69 W |
| 工作溫度範圍 | -55C to +175C (typical ST PowerFLAT MOSFET range) | -55C to +150C |
| 封裝 | PowerFLAT (5x6) - 8-Pin VDFN exposed pad | TDSON-8-5 (PG-TDSON-8-5) / SuperSO8 5x6 mm |
| 安裝類型 | Surface Mount | Surface Mount |
| MSL 等級 | 1 (per JEDEC J-STD-020) | — |
| RoHS 狀態 | Compliant | Compliant |
| Avalanche Rated | Yes (100% Rg2-T tested per ST datasheet) | — |
| Manufacturer | — | Infineon Technologies |
| Part Family | — | OptiMOS 30V |
| Drain-to-Source Voltage (VDS) Max | — | 30 V |
| Continuous Drain Current (ID) at Ta | — | 28 A |
| On-State Resistance RDS(on) Max at VGS=10V | — | 1.9 mOhm |
| On-State Resistance RDS(on) Typ at VGS=10V | — | [DATA_NEEDED: RDS(on) typical] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th)] |
| Gate Charge (Qg) Typ | — | [DATA_NEEDED: Qg total] |
| Avalanche Energy (EAS) | — | 80 mJ |
| Power Dissipation (PD) at Ta | — | 2.5 W |
| 濕度敏感等級 (MSL) | — | 1 |
| Built-in Body Diode | — | Yes |
| Configuration | — | Single N-Channel with Built-in Diode |