STW45NM60-H vs SPW47N60C3 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci STW45NM60-H disebabkan oleh STMicroelectronics dan SPW47N60C3 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr STW45NM60-H SPW47N60C3
Merek STMicroelectronics Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel —
Technology MDmesh (super-junction) CoolMOS C3 (superjunction)
Drain-Source Voltage (VDS) 600 V (650 V at TJMAX) —
Continuous Drain Current (ID) 45 A at Tc = 25 °C —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
Power Dissipation (PD) 417 W at Tc = 25 °C —
On-Resistance (RDS(on)) 0.09 Ω typical at VGS = 10 V —
Gate-Source Threshold Voltage (VGS(th)) 4 V typical —
Gate Charge (Qg) [DATA_NEEDED: typical total gate charge] —
Input Capacitance (Ciss) [DATA_NEEDED: input capacitance] —
Gambaran Suhu Operasi -55 °C to +150 °C (TJ) -55C to +150C (junction, typical for CoolMOS C3)
Kemasan TO-247-3 (through-hole) TO-247-3-1 (PG-TO247-3-1) through-hole
Jenis Pemasangan Through Hole Through Hole
Avalanche Rating 100% avalanche tested —
dv/dt Capability High —
Status RoHS Compliant Compliant
Part Number — SPW47N60C3
Manufacturer — Infineon Technologies AG
Jenis Transistor — N-Channel MOSFET
Drain-Source Voltage (V(BR)DSS) — 650 V
Continuous Drain Current (ID) at Tc — 47 A
Power Dissipation (PD) at Tc — 415 W
RDS(on) (typical) — 70 mOhm [DATA_NEEDED: VGS test condition]
Gate Charge (Qg, typical) — [DATA_NEEDED: nanocoulombs]
Output Capacitance Eoss @ 400V — Very low (per C3 series datasheet)
Configuration — Single N-channel, 3 pins (G, D, S)
Lead-Free — Yes
Aras MSL — N/A (through-hole)
Series — CoolMOS C3 (600V generation)

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