STW45NM60-H vs SPW47N60C3 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng STW45NM60-H sa pamamagitan ng STMicroelectronics at SPW47N60C3 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Pagsanggunian na paghahambing

Parametro STW45NM60-H SPW47N60C3
Brand STMicroelectronics Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
FET Type N-Channel —
Technology MDmesh (super-junction) CoolMOS C3 (superjunction)
Drain-Source Voltage (VDS) 600 V (650 V at TJMAX) —
Continuous Drain Current (ID) 45 A at Tc = 25 °C —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
Power Dissipation (PD) 417 W at Tc = 25 °C —
On-Resistance (RDS(on)) 0.09 Ω typical at VGS = 10 V —
Gate-Source Threshold Voltage (VGS(th)) 4 V typical —
Gate Charge (Qg) [DATA_NEEDED: typical total gate charge] —
Input Capacitance (Ciss) [DATA_NEEDED: input capacitance] —
Hanay ng Temperature na Operasyon -55 °C to +150 °C (TJ) -55C to +150C (junction, typical for CoolMOS C3)
Packhaging TO-247-3 (through-hole) TO-247-3-1 (PG-TO247-3-1) through-hole
Uri ng Pagpapasok Through Hole Through Hole
Avalanche Rating 100% avalanche tested —
dv/dt Capability High —
Tindminan RoHS Compliant Compliant
Part Number — SPW47N60C3
Manufacturer — Infineon Technologies AG
Uri ng Transistor — N-Channel MOSFET
Drain-Source Voltage (V(BR)DSS) — 650 V
Continuous Drain Current (ID) at Tc — 47 A
Power Dissipation (PD) at Tc — 415 W
RDS(on) (typical) — 70 mOhm [DATA_NEEDED: VGS test condition]
Gate Charge (Qg, typical) — [DATA_NEEDED: nanocoulombs]
Output Capacitance Eoss @ 400V — Very low (per C3 series datasheet)
Configuration — Single N-channel, 3 pins (G, D, S)
Lead-Free — Yes
Level ng MSL — N/A (through-hole)
Series — CoolMOS C3 (600V generation)

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