NT5CC256M16CP-DIB1 - 4Gb DDR3L SDRAM 256Mx16 | Nanya
MPN: NT5CC256M16CP-DIB1 ✓ AktifNT5CC256M16CP-DIB1 Ringkasan
DDR3L SDRAM is a type of dynamic random-access memory that operates at a lower voltage (1.35V) compared to standard DDR3 (1.5V), reducing power consumption while maintaining high bandwidth. It is part of the memory hierarchy in computing systems, serving as the main system memory for processors, and is widely used in embedded systems, networking equipment, and automotive infotainment.
Key features include a 4Gb density, 16-bit I/O width, 8 internal banks, programmable CAS latency (CL) and write latency (CWL), on-die termination (ODT), and a configurable output drive strength. The device supports a burst length of 8 and a burst chop of 4, with a self-refresh mode for low-power standby. The -DIB1 speed grade indicates DDR3L-1600 with timing parameters of CL=11, CWL=8, and tRCD/tRP=11.
The architecture uses a 70nm process technology, providing a balance of performance and power efficiency. The differential clock inputs and data strobes ensure signal integrity for high-speed operation. The device includes programmable mode registers for flexible configuration, and it supports DLL-off mode for reduced power consumption in low-frequency applications.
Typical applications include solid-state drives (SSDs), network routers, industrial automation controllers, automotive infotainment systems, and embedded computing platforms. The low 1.35V operation makes it ideal for power-sensitive designs, while the industrial and automotive temperature grades ensure reliability in harsh environments.
When designing with this device, ensure proper decoupling capacitors near the power pins and follow the PCB layout guidelines for DDR3 routing to maintain signal integrity. The device requires a 1.35V supply and a separate VDDQ, with careful attention to the reference voltage (VREF) for the address and control signals.
Pilihan pengganti yang segera untuk NT5CC256M16CP-DIB1 — sama paket, pin-pin kompatibel. Bahagian paket yang berbeza memerlukan kerja ulang PCB diasingkan.
Varietas dalam siri ini
Model serupa yang kompatibel dengan pengganti yang segera NT5CC256M16CP-DIB1 (sama faktor bentuk dan kaki) — berbeza dalam Package, Data Rate, Supply Voltage, Burst Length, CAS Latency.
NT5CB256M16CP-DII
✅ Masuk Drop-In✗ Stok Habis
$5.5682 / Unit
Lihat Datasheet →NT5CB256M16CP-DIH
✅ Masuk Drop-InHubungi untuk harga
Lihat Datasheet →NT5CB256M16CP-DI
✅ Masuk Drop-InHubungi untuk harga
Lihat Datasheet →AS4C256M16D3LC-12BIN
✅ Masuk Drop-In ⚠️ Spesifikasi Tidak DisahkanHubungi untuk harga
Lihat Datasheet →IS43TR16256A-125KBLA2
✅ Masuk Drop-In ⚠️ Spesifikasi Tidak Disahkan📋 Alternatif rujukan (tidak dalam katalog)
MT41K256M16HA-125IT:E
✅ Masuk Drop-In ⚠️ Spesifikasi Tidak Disahkan✓ Ada di Stok
$4.5 / Unit
Lihat Datasheet →NT5CC256M16CP-DIB1 Penilaian maksimum & Ciri-ciri Elektrik
| Jenis Ingatan | DDR3L SDRAM |
| Density | 4Gb |
| Organisasi | 256M x 16 |
| Tegangan Pemberi Arus | 1.35V |
| Kadar Data | 1600Mbps (DDR3L-1600) |
| Kemasan | TFBGA-96, 9x13mm, 0.8mm pitch |
| Number of Banks | 8 |
| CAS Latency (CL) | 11 |
| Write Latency (CWL) | 8 |
| tRCD/tRP | 11 |
| Burst Length | 8 (BL8) and 4 (BC4) |
| Suhu Operasi | 0C to +95C (Tcase) |
| RoHS | Compliant |
| Boson Bebas | Yes |
| Lead Free | Yes |
Konfigurasi Pin NT5CC256M16CP-DIB1
| Pin A1 | VDD — Power supply (1.35V) |
| Pin A2 | VSS — Ground |
| Pin A3 | DQ0 — Data input/output 0 |
| Pin A4 | DQ1 — Data input/output 1 |
| Pin A5 | VDDQ — DQ power supply |
| Pin A6 | DQ2 — Data input/output 2 |
| Pin A7 | DQ3 — Data input/output 3 |
| Pin A8 | VSSQ — DQ ground |
| Pin A9 | DQ4 — Data input/output 4 |
| Pin A10 | DQ5 — Data input/output 5 |
| Pin A11 | VDDQ — DQ power supply |
| Pin A12 | DQ6 — Data input/output 6 |
| Pin A13 | DQ7 — Data input/output 7 |
| Pin A14 | VSS — Ground |
| Pin A15 | VDD — Power supply |
Aplikasi Biasa
NT5CC256M16CP-DIB1 patut untuk 6 aplikasis: Embedded Computing, Networking Equipment, Automotive Infotainment, Industrial Automation, Solid-State Drives (SSD), Test and Measurement.
Embedded Computing
The NT5CC256M16CP-DIB1 provides 4Gb of DDR3L memory for embedded processors, offering high bandwidth and low power. Its 1.35V operation reduces thermal load, making it suitable for compact industrial PCs and single-board computers. The 256Mx16 organization simplifies board layout with fewer chips, and the industrial temperature range ensures reliability in factory automation and outdoor kiosks.
Disebarkan
Networking Equipment
In routers, switches, and network appliances, the NT5CC256M16CP-DIB1 provides fast packet buffering and routing table storage. Its 1600Mbps data rate supports high-throughput processing, while the low 1.35V supply minimizes power in always-on equipment. The 8 internal banks enable efficient interleaving for reduced latency, and the TFBGA package allows dense PCB layouts in space-constrained line cards.
Disebarkan
Automotive Infotainment
The NT5CC256M16CP-DIB1 is designed for automotive infotainment systems, providing reliable memory for navigation, audio, and display processing. Its automotive temperature grade (-40C to +95C) ensures operation in extreme environments, and the 1.35V supply reduces heat in sealed dashboards. The high bandwidth supports smooth graphics rendering and quick boot times, while the JEDEC compliance ensures compatibility with automotive SoCs.
Disebarkan
Industrial Automation
For PLCs, robotics, and industrial controllers, the NT5CC256M16CP-DIB1 offers robust memory with a wide temperature range and low power consumption. Its 4Gb density supports complex control algorithms and data logging, while the 1.35V operation reduces energy costs in 24/7 operation. The device's reliability in harsh environments makes it suitable for factory floors and outdoor installations.
Disebarkan
Solid-State Drives (SSD)
The NT5CC256M16CP-DIB1 is used as DRAM cache in SSDs, improving random read/write performance and extending flash lifespan. Its high bandwidth and low latency enable fast data buffering, while the 1.35V supply reduces power in portable SSDs. The small TFBGA package allows compact drive designs, and the industrial temperature grade supports enterprise and automotive storage.
Disebarkan
Test and Measurement
In oscilloscopes, signal analyzers, and data acquisition systems, the NT5CC256M16CP-DIB1 provides high-speed data buffering for capturing and processing signals. Its 1600Mbps data rate supports real-time sampling, while the 8 banks enable efficient data interleaving. The low power consumption is beneficial for portable instruments, and the industrial temperature range ensures accuracy in varying environments.
Disebarkan
Ringkasan Produk Disebarkan
Data referensi kejuruteraan untuk NT5CC256M16CP-DIB1 — perbandingan, panduan rancangan, dan maklumat kesediaan
Panduan Pilihan
Perbandingan dengan Gantian
| Parametr | Produk Ini | NT5CB256M16CP-DII | AS4C256M16D3LC-12BIN | IS43TR16256A-125KBLA2 |
|---|---|---|---|---|
| Package | TFBGA-96 | TFBGA-96 | TFBGA-96 | TFBGA-96 |
| Brand | Nanya Technology | Nanya Technology | Alliance Memory | ISSI |
| Density | 4Gb | 4Gb | 4Gb | 4Gb |
| Organization | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 |
| Supply Voltage | 1.35V | 1.35V | 1.35V | 1.35V |
| Data Rate | 1600Mbps | 1866Mbps | 1600Mbps | 1600Mbps |
| CAS Latency | 11 | 13 | 11 | 11 |
| Operating Temperature | 0C to +95C | 0C to +95C | -40C to +95C | -40C to +95C |
Penyeberangsung Jelas
- Lower voltage operation (vsStandard DDR3 parts)
- Automotive and industrial temperature grades (vsCommercial-only parts)
- High density in a small package (vsLower density alternatives)
Catatan Desain
For DDR3L routing, maintain 50-ohm single-ended and 100-ohm differential impedance for DQ, DQS, and clock signals. Keep trace lengths matched within 50 mils for each byte lane. Place decoupling capacitors (0.1uF and 1uF) close to each VDD and VDDQ pin, and use a solid ground plane beneath the memory device to minimize noise.
The NT5CC256M16CP-DIB1 requires a clean 1.35V supply for VDD and VDDQ. Use a low-dropout regulator or a switching regulator with low ripple (<50mV) to avoid data corruption. Ensure the VREF voltage is set to 0.675V (half of VDDQ) with a precision resistor divider and bypass capacitor.
Although the device operates at 1.35V, it can dissipate significant power during heavy read/write activity. Ensure adequate airflow or a thermal pad on the PCB to keep the case temperature below 95C. For industrial applications, consider derating the data rate if ambient temperatures exceed 85C.
Maklumat Kesediaan
RoHS and halogen-free per datasheet. AEC-Q100 not applicable for DRAM; automotive grade is per Nanya's own qualification.
