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Samsung Electronics

K4B4G1646E-BCNB - 4Gb DDR3 SDRAM, 256Mx16, 1.35V | Samsung

MPN: K4B4G1646E-BCNB ✓ Aktif
1.35 V (1.283 V to 1.45 V) Vdss 96-ball FBGA Package DDR3 SDRAM Memory
Dari $13.5227 USD / Unit
MOQ: 1 |
Harga diperkaya: 2026-08-17
Pengiraan Volume
Kuantiti Harga Satuan Lengkap
1 $23.1818 $23.18
10 $16.7424 $167.42
100 $14.8106 $1,481.06
500 $14.1667 $7,083.35
1,000 $13.5227 $13,522.70
ℹ️ Semua harga adalah dalam USD

K4B4G1646E-BCNB Ringkasan

The Samsung K4B4G1646E-BCNB is a 4Gb DDR3 SDRAM organized as 256Mx16, operating at 1.35V (low voltage) with a data rate of 1866 Mbps. It is ideal for mobile and embedded applications requiring high bandwidth and low power consumption. The device is housed in a 96-ball FBGA package and is RoHS compliant.

Pilihan pengganti yang segera untuk K4B4G1646E-BCNB — sama paket, pin-pin kompatibel. Bahagian paket yang berbeza memerlukan kerja ulang PCB diasingkan.

Varietas dalam siri ini

Model serupa yang kompatibel dengan pengganti yang segera K4B4G1646E-BCNB (sama faktor bentuk dan kaki) — berbeza dalam Package, Memory Type, Operating Temperature, Supply Voltage, Burst Length.

Samsung Electronics
Package: 96-FBGA
Supply Voltage: 1.5 V (DDR3L variants 1.35 V)
Bandingkan Dengan K4B4G1646E-BCNB →
Samsung Electronics
Package: 96-ball FBGA (13 x 9 mm, 0.8 mm pitch)
Memory Type: DDR3L SDRAM
Operating Temperature: 0°C to +95°C (TC)
Bandingkan Dengan K4B4G1646E-BCNB →

Alat Perbandingan Cepat — Pilih bahagian alternatif untuk perbandingan bersamaan:

MT41K256M16TW-107

Micron Technology
DDR3L SDRAM · 4 Gbit · 256M x 16 · Parallel · 933 MHz (DDR3L-1866) · 20 ns · 1.35 V · 16 bit

✗ Stok Habis

$14.1 / Unit

Lihat Datasheet →

H5TQ4G63AFR-H9C

SK hynix
DDR3 SDRAM · 4 Gb · 256M x 16 · 1.5 V · 0.255 ns · 96-ball TFBGA · RECTANGULAR · 8192

✗ Stok Habis

$6.5 / Unit

Lihat Datasheet →

IS43TR16256A-15HBL-TR

ISSI, Integrated Silicon Solution Inc
DDR3 SDRAM · 4 Gbit · 256M x 16 · 667 MHz · 1333 Mbps · 20 ns · 1.5 V · 96-TWBGA (9x13 mm)

✗ Stok Habis

$10.3409 / Unit

Lihat Datasheet →

W632GU6NB

Winbond DDR3 4Gb 256Mx16

📋 Alternatif rujukan (tidak dalam katalog)

AS4C256M16D3L-12BCN

Alliance Memory
DDR3L SDRAM · 4 Gbit · 256M x 16 · 16 bit · 800 MHz · 1600 Mbps · 20 ns · 1.35 V

Hubungi untuk harga

Lihat Datasheet →

K4B4G1646E-BCNB Penilaian maksimum & Ciri-ciri Elektrik

Jenis Ingatan DDR3 SDRAM
Saiz Ingatan 4 Gb
Organisasi 256M x 16
Tegangan Pemberi Arus 1.35 V (1.283 V to 1.45 V)
Kadar Data 1866 Mbps
Suhu Operasi 0C to +95C
Kemasan 96-ball FBGA
Jenis Pemasangan Surface Mount
Status RoHS Compliant
Bilangan Pin 96
Jenis Antaramuka Parallel
Refresh 8K / 64 ms
Burst Length 8, 4 (fixed)

Konfigurasi Pin K4B4G1646E-BCNB

Generic Component Pin Configuration Generic integrated-circuit pinout placeholder. Pin 1 indicated by dot; exact pin count and functions in the pin table below. 1 N 2 N-1 3 N-2 4 N-3 Pin Configuration See pin table below for pin functions Package-specific diagram not available
Pin A1 VDD — Power supply (1.35V)
Pin A2 DQ0 — Data I/O 0
Pin A3 DQ1 — Data I/O 1
Pin B1 VSS — Ground
Pin B2 DQ2 — Data I/O 2
Pin B3 DQ3 — Data I/O 3
Pin C1 VDDQ — DQ power supply
Pin C2 DQS0 — Data strobe 0 (positive)
Pin C3 DQS0# — Data strobe 0 (negative)
Pin D1 VSS — Ground
Pin D2 CLK — Clock input
Pin D3 CLK# — Complementary clock input
Pin E1 CKE — Clock enable
Pin E2 CS# — Chip select
Pin E3 RAS# — Row address strobe
Pin F1 CAS# — Column address strobe
Pin F2 WE# — Write enable
Pin F3 BA0 — Bank address 0
Pin G1 BA1 — Bank address 1
Pin G2 A0 — Address input 0
Pin G3 A1 — Address input 1

Aplikasi Biasa

K4B4G1646E-BCNB patut untuk 6 aplikasis: Mobile Computing, Embedded Systems, Networking Equipment, Consumer Electronics, Automotive Infotainment, Industrial Automation.

📱

Mobile Computing

Used in laptops and tablets for main memory with low power consumption.

🏭

Embedded Systems

Ideal for industrial single-board computers and IoT gateways.

🌐

Networking Equipment

Used in routers, switches, and network appliances for packet buffering.

📺

Consumer Electronics

Found in smart TVs, set-top boxes, and gaming consoles.

🚗

Automotive Infotainment

Used in car infotainment systems and navigation units.

🏭

Industrial Automation

Deployed in PLCs and HMI panels for data logging and display.

What is the supply voltage range for K4B4G1646E-BCNB?
The supply voltage is 1.35V nominal, with a range of 1.283V to 1.45V for low-voltage DDR3 operation.
What is the maximum data rate of this DDR3 SDRAM?
The K4B4G1646E-BCNB supports a data rate of 1866 Mbps per pin.
What is the memory organization of K4B4G1646E-BCNB?
It is organized as 256M words x 16 bits, totaling 4 Gb.
What package does K4B4G1646E-BCNB come in?
It is housed in a 96-ball FBGA (Fine-pitch Ball Grid Array) package.
Is K4B4G1646E-BCNB RoHS compliant?
Yes, the device is RoHS compliant.
What is the operating temperature range?
The operating temperature range is 0°C to +95°C (case temperature).
Can K4B4G1646E-BCNB be used in mobile applications?
Yes, its low voltage (1.35V) and high density make it suitable for mobile and embedded applications.
What is the difference between DDR3 and DDR3L?
DDR3L operates at 1.35V, while standard DDR3 operates at 1.5V. K4B4G1646E-BCNB is a DDR3L device.
Does K4B4G1646E-BCNB support ECC?
No, this is a non-ECC memory. ECC versions are typically x72 organizations.
What is the burst length supported?
It supports burst lengths of 8 and 4 (fixed).
What is the refresh requirement?
It requires 8K refresh cycles every 64 ms.
Is K4B4G1646E-BCNB compatible with DDR3 sockets?
Yes, it is pin-compatible with standard DDR3 sockets, but voltage levels must match.
What is the typical power consumption?
[DATA_NEEDED: Typical power consumption] Please refer to the datasheet for detailed power numbers.
What is the part number suffix meaning?
The suffix 'E' indicates the generation, 'B' indicates package type (FBGA), 'CNB' indicates speed and temperature grade.
Where can I find the full datasheet?
The datasheet is available on Samsung's semiconductor website at the provided URL.
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