NT5CC256M16CP-DIB1 - 4Gb DDR3L SDRAM 256Mx16 | Nanya
Référence : NT5CC256M16CP-DIB1 ✓ Actif| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $8.5 | $8,50 |
| 10 | $7.8 | $78,00 |
| 100 | $7.1 | $710,00 |
| 500 | $6.5 | $3 250,00 |
| 1 000 | $6 | $6 000,00 |
NT5CC256M16CP-DIB1 Présentation
DDR3L SDRAM is a type of dynamic random-access memory that operates at a lower voltage (1.35V) compared to standard DDR3 (1.5V), reducing power consumption while maintaining high bandwidth. It is part of the memory hierarchy in computing systems, serving as the main system memory for processors, and is widely used in embedded systems, networking equipment, and automotive infotainment.
Key features include a 4Gb density, 16-bit I/O width, 8 internal banks, programmable CAS latency (CL) and write latency (CWL), on-die termination (ODT), and a configurable output drive strength. The device supports a burst length of 8 and a burst chop of 4, with a self-refresh mode for low-power standby. The -DIB1 speed grade indicates DDR3L-1600 with timing parameters of CL=11, CWL=8, and tRCD/tRP=11.
The architecture uses a 70nm process technology, providing a balance of performance and power efficiency. The differential clock inputs and data strobes ensure signal integrity for high-speed operation. The device includes programmable mode registers for flexible configuration, and it supports DLL-off mode for reduced power consumption in low-frequency applications.
Typical applications include solid-state drives (SSDs), network routers, industrial automation controllers, automotive infotainment systems, and embedded computing platforms. The low 1.35V operation makes it ideal for power-sensitive designs, while the industrial and automotive temperature grades ensure reliability in harsh environments.
When designing with this device, ensure proper decoupling capacitors near the power pins and follow the PCB layout guidelines for DDR3 routing to maintain signal integrity. The device requires a 1.35V supply and a separate VDDQ, with careful attention to the reference voltage (VREF) for the address and control signals.
Alternatives de remplacement direct pour NT5CC256M16CP-DIB1 — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Variantes de cette série
Modèles de la même série directement compatibles avec NT5CC256M16CP-DIB1 (même facteur de forme et même empreinte) — différant par Package, Data Rate, Supply Voltage, Burst Length, CAS Latency.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
NT5CB256M16CP-DII
✅ Remplacement direct✓ En stock
$5.5682 / unité
Voir la fiche technique →NT5CB256M16CP-DIH
✅ Remplacement direct✓ En stock
$6.5 / unité
Voir la fiche technique →NT5CB256M16CP-DI
✅ Remplacement direct✓ En stock
$6.5 / unité
Voir la fiche technique →AS4C256M16D3LC-12BIN
✅ Remplacement direct ⚠️ Spécifications non vérifiées✓ En stock
$42 / unité
Voir la fiche technique →IS43TR16256A-125KBLA2
✅ Remplacement direct ⚠️ Spécifications non vérifiées📋 Alternative de référence (hors catalogue)
MT41K256M16HA-125IT:E
✅ Remplacement direct ⚠️ Spécifications non vérifiées✓ En stock
$4.5 / unité
Voir la fiche technique →NT5CC256M16CP-DIB1 Valeurs maximales et caractéristiques électriques
| Type de mémoire | DDR3L SDRAM |
| Density | 4Gb |
| Organisation de la mémoire | 256M x 16 |
| Tension d'alimentation | 1.35V |
| Débit de données | 1600Mbps (DDR3L-1600) |
| Boîtier | TFBGA-96, 9x13mm, 0.8mm pitch |
| Number of Banks | 8 |
| CAS Latency (CL) | 11 |
| Write Latency (CWL) | 8 |
| tRCD/tRP | 11 |
| Burst Length | 8 (BL8) and 4 (BC4) |
| Température de fonctionnement | 0C to +95C (Tcase) |
| RoHS | Compliant |
| Sans halogène | Yes |
| Lead Free | Yes |
Configuration des broches de NT5CC256M16CP-DIB1
| Broche A1 | VDD — Power supply (1.35V) |
| Broche A2 | VSS — Ground |
| Broche A3 | DQ0 — Data input/output 0 |
| Broche A4 | DQ1 — Data input/output 1 |
| Broche A5 | VDDQ — DQ power supply |
| Broche A6 | DQ2 — Data input/output 2 |
| Broche A7 | DQ3 — Data input/output 3 |
| Broche A8 | VSSQ — DQ ground |
| Broche A9 | DQ4 — Data input/output 4 |
| Broche A10 | DQ5 — Data input/output 5 |
| Broche A11 | VDDQ — DQ power supply |
| Broche A12 | DQ6 — Data input/output 6 |
| Broche A13 | DQ7 — Data input/output 7 |
| Broche A14 | VSS — Ground |
| Broche A15 | VDD — Power supply |
Applications typiques
NT5CC256M16CP-DIB1 convient pour 6 applications: Embedded Computing, Networking Equipment, Automotive Infotainment, Industrial Automation, Solid-State Drives (SSD), Test and Measurement.
Embedded Computing
The NT5CC256M16CP-DIB1 provides 4Gb of DDR3L memory for embedded processors, offering high bandwidth and low power. Its 1.35V operation reduces thermal load, making it suitable for compact industrial PCs and single-board computers. The 256Mx16 organization simplifies board layout with fewer chips, and the industrial temperature range ensures reliability in factory automation and outdoor kiosks.
Recommandé
Networking Equipment
In routers, switches, and network appliances, the NT5CC256M16CP-DIB1 provides fast packet buffering and routing table storage. Its 1600Mbps data rate supports high-throughput processing, while the low 1.35V supply minimizes power in always-on equipment. The 8 internal banks enable efficient interleaving for reduced latency, and the TFBGA package allows dense PCB layouts in space-constrained line cards.
Recommandé
Automotive Infotainment
The NT5CC256M16CP-DIB1 is designed for automotive infotainment systems, providing reliable memory for navigation, audio, and display processing. Its automotive temperature grade (-40C to +95C) ensures operation in extreme environments, and the 1.35V supply reduces heat in sealed dashboards. The high bandwidth supports smooth graphics rendering and quick boot times, while the JEDEC compliance ensures compatibility with automotive SoCs.
Recommandé
Industrial Automation
For PLCs, robotics, and industrial controllers, the NT5CC256M16CP-DIB1 offers robust memory with a wide temperature range and low power consumption. Its 4Gb density supports complex control algorithms and data logging, while the 1.35V operation reduces energy costs in 24/7 operation. The device's reliability in harsh environments makes it suitable for factory floors and outdoor installations.
Recommandé
Solid-State Drives (SSD)
The NT5CC256M16CP-DIB1 is used as DRAM cache in SSDs, improving random read/write performance and extending flash lifespan. Its high bandwidth and low latency enable fast data buffering, while the 1.35V supply reduces power in portable SSDs. The small TFBGA package allows compact drive designs, and the industrial temperature grade supports enterprise and automotive storage.
Recommandé
Test and Measurement
In oscilloscopes, signal analyzers, and data acquisition systems, the NT5CC256M16CP-DIB1 provides high-speed data buffering for capturing and processing signals. Its 1600Mbps data rate supports real-time sampling, while the 8 banks enable efficient data interleaving. The low power consumption is beneficial for portable instruments, and the industrial temperature range ensures accuracy in varying environments.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour NT5CC256M16CP-DIB1 — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | NT5CB256M16CP-DII | AS4C256M16D3LC-12BIN | IS43TR16256A-125KBLA2 |
|---|---|---|---|---|
| Package | TFBGA-96 | TFBGA-96 | TFBGA-96 | TFBGA-96 |
| Brand | Nanya Technology | Nanya Technology | Alliance Memory | ISSI |
| Density | 4Gb | 4Gb | 4Gb | 4Gb |
| Organization | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 |
| Supply Voltage | 1.35V | 1.35V | 1.35V | 1.35V |
| Data Rate | 1600Mbps | 1866Mbps | 1600Mbps | 1600Mbps |
| CAS Latency | 11 | 13 | 11 | 11 |
| Operating Temperature | 0C to +95C | 0C to +95C | -40C to +95C | -40C to +95C |
Principaux différenciateurs
- Lower voltage operation (vs Standard DDR3 parts)
- Automotive and industrial temperature grades (vs Commercial-only parts)
- High density in a small package (vs Lower density alternatives)
Notes de conception
For DDR3L routing, maintain 50-ohm single-ended and 100-ohm differential impedance for DQ, DQS, and clock signals. Keep trace lengths matched within 50 mils for each byte lane. Place decoupling capacitors (0.1uF and 1uF) close to each VDD and VDDQ pin, and use a solid ground plane beneath the memory device to minimize noise.
The NT5CC256M16CP-DIB1 requires a clean 1.35V supply for VDD and VDDQ. Use a low-dropout regulator or a switching regulator with low ripple (<50mV) to avoid data corruption. Ensure the VREF voltage is set to 0.675V (half of VDDQ) with a precision resistor divider and bypass capacitor.
Although the device operates at 1.35V, it can dissipate significant power during heavy read/write activity. Ensure adequate airflow or a thermal pad on the PCB to keep the case temperature below 95C. For industrial applications, consider derating the data rate if ambient temperatures exceed 85C.
Informations de conformité
RoHS and halogen-free per datasheet. AEC-Q100 not applicable for DRAM; automotive grade is per Nanya's own qualification.
