NT5CC256M16CP-DIB1 vs K4A8G165WB-BCPB Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci NT5CC256M16CP-DIB1 disebabkan oleh Nanya Technology dan K4A8G165WB-BCPB disebabkan oleh Samsung Electronics. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | NT5CC256M16CP-DIB1 | K4A8G165WB-BCPB |
|---|---|---|
| Merek | Nanya Technology | Samsung Electronics |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | DDR3L SDRAM | DDR4 SDRAM |
| Density | 4Gb | 8 Gb |
| Organisasi | 256M x 16 | 512M x 16 |
| Tegangan Pemberi Arus | 1.35V | — |
| Kadar Data | 1600Mbps (DDR3L-1600) | 2133 Mbps |
| Kemasan | TFBGA-96, 9x13mm, 0.8mm pitch | 96FBGA (TFBGA) |
| Number of Banks | 8 | — |
| CAS Latency (CL) | 11 | — |
| Write Latency (CWL) | 8 | — |
| tRCD/tRP | 11 | — |
| Burst Length | 8 (BL8) and 4 (BC4) | — |
| Suhu Operasi | 0C to +95C (Tcase) | 0C to +85C |
| RoHS | Compliant | — |
| Boson Bebas | Yes | — |
| Lead Free | Yes | — |
| Supply Voltage (VDD) | — | 1.2 V |
| I/O Voltage (VDDQ) | — | 1.2 V |
| Number of Terminals | — | 96 |
| Package Shape | — | Rectangular, bottom terminal position |
| Die Generation | — | 8Gb B-die |
| Jenis Pemasangan | — | Surface Mount |
| Antaramuka | — | DDR4 (synchronous, double data rate) |
| Bank Groups | — | DDR4 bank-group architecture |
| Status RoHS | — | Compliant (per Lisleapex listing) |
| Refresh | — | [DATA_NEEDED: refresh specification] |