AS4C8M16SA-6BAN - 128Mb SDRAM 166MHz 3.3V 54-TFBGA | Alliance Memory
MPN: AS4C8M16SA-6BAN ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $21.93 | $21.93 |
| 10 | $19.9 | $199.00 |
| 100 | $18.1 | $1,810.00 |
| 500 | $16.5 | $8,250.00 |
| 1,000 | $14.85 | $14,850.00 |
AS4C8M16SA-6BAN Overview
Synchronous DRAM is a category of volatile DRAM memory that synchronizes all address, control, and data inputs to a single clock edge, unlike asynchronous DRAM which responds to control signal transitions independently. Within the memory hierarchy, SDRAM sits above asynchronous DRAM in performance and below DDR generations; it remains the workhorse memory class for embedded processors, networking equipment, and industrial systems that require burst-mode bandwidth without DDR controller complexity.
Key features of the AS4C8M16SA-6BAN include the 8M x 16 organization with four internal banks, a 166 MHz clock rate (CL3 programmable cas latency), auto refresh and self refresh modes per the Alliance Semiconductor/Alliance Memory datasheet, LVTTL-compatible 3.3V interface, and AEC-Q100-capable automotive temperature support. The 54-ball TFBGA (8x8 mm) package offers a compact surface-mount footprint with improved signal integrity compared to 54-pin TSOP II, reducing lead inductance for high-speed bus operation.
The device implements industry-standard SDRAM command architecture including bank activate, read, write, precharge, mode register set, and refresh commands, enabling straightforward integration with SDRAM controllers in FPGAs and microprocessors. The automotive temperature rating extends operation beyond the commercial 0C to +70C range, making the part suitable for harsh-environment designs.
Typical applications include automotive infotainment and telematics buffers, industrial HMI and PLC data buffers, FPGA-based instrumentation memory, medical equipment frame buffers, and communications equipment line-card buffering.
Design consideration: SDRAM requires continuous refresh - budget for the auto-refresh command interval in your controller scheduling, and terminate/series-damp clock and data lines to preserve 166 MHz signal integrity on multi-drop buses.
This page synthesizes distributor pricing, availability, drop-in replacement options, and practical design guidance not consolidated in the manufacturer datasheet.
Drop-in alternatives for AS4C8M16SA-6BAN — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
AS4C8M16SA-6BANTR
✅ Drop-In📋 Reference alternative (not in catalog)
AS4C8M16SA-6BIN
✅ Drop-In📋 Reference alternative (not in catalog)
AS4C8M16SA-6BAN Maximum Ratings & Electrical Characteristics
| Memory Type | SDRAM (synchronous DRAM), volatile |
| Memory Size | 128 Mbit |
| Memory Organization | 8M x 16 |
| Technology | DRAM - SDRAM |
| Clock Frequency | 166 MHz |
| Clock Cycle Time | 5 ns |
| Supply Voltage | 3.3 V |
| Interface Type | Parallel, LVTTL |
| Access Time | 5 ns |
| Package | 54-TFBGA (8x8 mm) |
| Mounting Type | Surface Mount |
| Temperature Grade | Automotive temp range |
| Refresh Mode | Auto Refresh and Self Refresh |
| Number of Banks | 4 |
| Packaging | Tray |
| Product Status | Active |
| Qualification | Automotive, AEC-Q100 |
AS4C8M16SA-6BAN 54-tfbga (8x8 mm) Pin Configuration Guide
Pin configuration for AS4C8M16SA-6BAN (54-tfbga (8x8 mm) package). This digital IC includes GPIO, communication interfaces (UART, SPI, I2C), and power pins. Refer to the manufacturer datasheet for alternate pin functions and configuration options. Essential for embedded system design and PCB layout.
No detailed pinout data available for AS4C8M16SA-6BAN.
Refer to the datasheet for full pin configuration.
Typical Applications
AS4C8M16SA-6BAN is suitable for 6 applications: Automotive Infotainment and Telematics, Industrial HMI and PLC Data Buffering, FPGA-Based Test and Measurement Instruments, Medical Equipment Frame Buffers and Working Memory, Communications and Networking Line Cards, Embedded Processor and MCU External Memory Expansion.
Automotive Infotainment and Telematics
The AS4C8M16SA-6BAN is explicitly graded for automotive temperature with AEC-Q100 qualification, making it a natural fit for infotainment graphics buffers, telematics data logging, and display frame buffers. Its 8M x 16 organization provides 16-bit wide bursts at 166 MHz, delivering roughly 333 MB/s peak bandwidth - sufficient for 800x480 display refresh or CAN/LIN-to-media buffering. Placed on a processor or FPGA SDRAM controller bus, the BGA package shortens trace stubs versus TSOP, improving signal integrity at speed. Designers should place the part within 50 mm of the controller, series-terminate address lines at the driver, and reserve CKE control so the memory can enter self refresh during key-off states to preserve data with minimal standby drain.
Recommended
Industrial HMI and PLC Data Buffering
Industrial human-machine interfaces and PLC front ends need reliable, non-complex RAM for screen buffers, recipe storage staging, and logging FIFOs. The AS4C8M16SA-6BAN provides 128Mbit of volatile buffering at 166 MHz from a simple 3.3V rail, avoiding the PHY complexity and termination rails DDR demands. Its four-bank architecture allows interleaved bank operation so a graphics engine can read a display region while the controller writes a log region, hiding latency in the SDRAM controller scheduler. With auto refresh at the standard 15.6 us interval and self refresh for panel standby, the design retains buffer contents through brief power interruptions backed by bulk capacitance. Alliance Memory positions its SDRAM line specifically for industrial applications requiring drop-in, pin-to-pin compatible sourcing.
Recommended
FPGA-Based Test and Measurement Instruments
Oscilloscope, logic analyzer, and data-acquisition front ends require deep capture buffers with deterministic latency. The AS4C8M16SA-6BAN's 16-bit bus at 166 MHz sustains approximately 333 MB/s peak, adequate for streaming from ADCs such as the AD9609 or multi-channel pipelines after decimation. The four internal banks enable ping-pong capture schemes - one bank fills while another drains - and the mode register allows burst length and CAS latency programming to match the FPGA controller pipeline. LVTTL 3.3V I/O simplifies bank-level design in legacy FPGA families without requiring voltage translation. Fly-by or matched-length point-to-point routing within 60 mm keeps setup/hold margins healthy at CL3, and DQM signals permit byte masking during capture alignment.
Recommended
Medical Equipment Frame Buffers and Working Memory
Patient monitors, ultrasound display subsystems, and diagnostic imaging consoles rely on dependable volatile memory for scan-line buffers, waveform histories, and GUI frame stores. The AS4C8M16SA-6BAN supplies 128Mbit organized as 8M x 16, letting 16-bit ADC sample words from devices like the ADS1274 store at native width without packing overhead. Alliance Memory explicitly targets medical applications for its SDRAM family, and the automotive-grade thermal rating gives margin inside fanless medical enclosures where ambient temperatures rise. The self refresh mode supports low-power standby between acquisitions, and byte-enable DQM lanes allow partial-word updates of status regions without read-modify-write cycles. Design the power-up sequence with a 100 us stabilization delay and mode register initialization per the datasheet before first access.
Recommended
Communications and Networking Line Cards
Packet buffering, queue management, and statistics aggregation on industrial Ethernet switches and gateways benefit from the AS4C8M16SA-6BAN's deterministic SDRAM interface. Pairing it with switch silicon such as the KSZ9893RNXI or a protocol processor, the 166 MHz 16-bit bus absorbs burst traffic while the controller schedules four banks as separate packet queues, using DQM for partial-frame writes. The BGA package reduces lead inductance relative to TSOP II, lowering ground bounce during simultaneous read/write switching - a visible benefit at full bus utilization. Auto refresh scheduling must be accounted for in worst-case buffer latency calculations; at 4096 cycles per 64 ms, refresh overhead is roughly a few percent of bandwidth, predictable and bounded.
Recommended
Embedded Processor and MCU External Memory Expansion
High-pin-count microcontrollers and SoCs with an external memory interface - such as PIC32MZ or Sitara families - use external SDRAM to escape on-chip SRAM limits for RTOS heaps, GUI libraries, and file-system caches. The AS4C8M16SA-6BAN connects directly to 3.3V LVTTL memory controllers at up to 166 MHz; its 8M x 16 organization matches 16-bit EMIF data buses natively. Initialization follows the standard SDRAM power-up sequence: wait 100 us, precharge all, issue two auto refresh cycles, then load the mode register for CL3 and the desired burst length. Keep address/control traces length-matched within the controller's skew budget and add 22-33 ohm series resistors on clock and strobes to damp reflections.
Recommended
Recommended Products Summary
Engineering reference data for AS4C8M16SA-6BAN — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | AS4C8M16SA-6BANTR | AS4C8M16SA-6BIN | AS4C8M16SA-6TIN | AS4C16M16SA-6TCN |
|---|---|---|---|---|---|
| Package | 54-TFBGA (8x8 mm) | 54-TFBGA (8x8 mm) - same | 54-TFBGA (8x8 mm) - same | 54-TSOP II - different | 54-TSOP II - different |
| Brand | Alliance Memory | Alliance Memory | Alliance Memory | Alliance Memory | Alliance Memory |
| Memory Size | 128 Mbit | 128 Mbit | 128 Mbit | 128 Mbit | 256 Mbit |
| Memory Organization | 8M x 16 | 8M x 16 | 8M x 16 | 8M x 16 | 16M x 16 |
| Clock Frequency | 166 MHz | 166 MHz | 166 MHz | 166 MHz | 166 MHz |
| Supply Voltage | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V |
| Temperature Grade | Automotive temp, AEC-Q100 | Automotive temp | Industrial temp | Industrial temp | Commercial temp |
| Refresh Support | Auto refresh and self refresh | Auto refresh and self refresh | Auto refresh and self refresh | Auto refresh and self refresh | Auto refresh and self refresh |
Key Differentiators
- Automotive temperature grade with AEC-Q100 qualification (vs AS4C8M16SA-6BIN)
- Compact BGA package versus TSOP II equivalents (vs AS4C8M16SA-6TIN)
- Single-qualified-source trade-off for automotive BGA designs (vs MT48LC8M16A2P-6A:L (Micron))
Design Notes
For 166 MHz SDRAM operation, keep all address, control, and data traces as short as practical - ideally under 60 mm point-to-point in a single-DRAM system. Match data-group trace lengths to the clock within the controller skew specification, and place 22-33 ohm series resistors at the driver on CLK, DQS-equivalent strobes, and DQM lines to damp reflections. The 54-TFBGA ballout means escape routing on the bottom layer; allow via-in-pad or dog-bone fanout with at least one solid ground plane directly under the BGA for return current paths.
Decouple VDD and VDDQ separately: place at least 2x 0.1 uF ceramic capacitors adjacent to the supply balls plus one 10 uF bulk capacitor per device. SDRAM current is strongly burst-correlated - simultaneous bank activation on multiple DQ lines creates fast di/dt events that show up as rail droop and timing jitter. Estimated: at 166 MHz full-page bursts, expect tens of mA average with peaks above 100 mA; size the 3.3V regulator for peak, not average, and verify rail droop stays inside the 3.3V tolerance band.
The most common SDRAM bring-up failure is incorrect initialization order: the controller must wait approximately 100 us after stable power, issue PRECHARGE ALL, perform two or more AUTO REFRESH cycles, then load the MODE REGISTER before any data access. Second, refresh must run at the 15.6 us auto-refresh interval (4096 cycles per 64 ms) - omitting it produces intermittent bit errors that look like software bugs. Third, respect CKE sequencing: entering and exiting self refresh has minimum pulse-width requirements per the Alliance Memory datasheet.
Compliance Information
Octopart parameter comparison lists the AS4C8M16SA-6BAN as Automotive, AEC-Q100. RoHS/REACH/lead-free/halogen status not stated in the provided web data.
