IHW30N160R5XKSA1 - 1600V 30A RC-IGBT Diode | Infineon TO-247
MPN: IHW30N160R5XKSA1 β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $5.42 | $5.42 |
| 10 | $4.78 | $47.80 |
| 100 | $3.95 | $395.00 |
| 500 | $3.32 | $1,660.00 |
| 1,000 | $2.85 | $2,850.00 |
Drop-in alternatives for IHW30N160R5XKSA1 β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
IHW30N160R5
β Drop-Inπ Reference alternative (not in catalog)
IHW40N160R5XKSA1
β Drop-In β οΈ εζ°εΎ ιͺθ―π Reference alternative (not in catalog)
IHW30N160R2XKSA1
β Drop-In β οΈ εζ°εΎ ιͺθ―π Reference alternative (not in catalog)
IHW30N160R5XKSA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Part Number | IHW30N160R5XKSA1 |
| Device Type | Reverse-Conducting IGBT (RC-IGBT) |
| Technology | Field Stop Trench (R5 / RC-H5) |
| Collector-Emitter Voltage (VCES) | 1600 V |
| Continuous Collector Current (IC, TC=25C) | 60 A |
| Maximum Power Dissipation (Ptot) | 263 W |
| VCE(sat) at IC=30A | 1.85 V |
| Operating Junction Temperature | -40C to +175C |
| Diode Type | Monolithically integrated anti-parallel diode (RC-IGBT) |
| Package | TO-247-3 (PG-TO247-3) |
| Mounting Type | Through Hole |
| RoHS Status | Compliant |
IHW30N160R5XKSA1 Pin Configuration
| Pin 1 | Gate (G) β Gate control input for IGBT; connect to gate driver output through Rg |
| Pin 2 | Collector (C) β IGBT collector / diode cathode; connect to high-voltage DC bus positive |
| Pin 3 | Emitter (E) β IGBT emitter / diode anode; connect to low-side of half-bridge and gate driver return |
Reverse-Conducting IGBT Forward Bias Safe Operating Area
Typical Applications
IHW30N160R5XKSA1 is suitable for 6 applications: Induction Cooking Inverters, Microwave Oven Power Inverters, Rice Cooker and Home Appliance Inverter Heating, Industrial Soft-Start and Motor Drive Front-Ends, Welding Inverter Primary Stages, Solar Inverter Auxiliary and Snubber Circuits.
Induction Cooking Inverters
The IHW30N160R5XKSA1 is specifically engineered by Infineon for induction cooking applications, where it serves as the main switching element in the resonant half-bridge inverter driving the induction coil. Its 1600 V VCES rating handles rectified 230 VAC mains plus resonant voltage overshoot, while the monolithically integrated diode eliminates the need for an external freewheeling diode in the half-bridge leg. The R5 trench field-stop technology delivers low VCE(sat) of 1.85 V at 30 A and fast switching at 20-50 kHz typical induction-cooktop frequencies. Engineers benefit from reduced BOM cost, smaller PCB footprint, and lower EMI due to the absence of diode-recovery transients from a discrete anti-parallel component.
Recommended
Microwave Oven Power Inverters
The IHW30N160R5XKSA1's combination of 1600 V blocking voltage and 30 A current capability makes it well-suited for microwave oven high-voltage inverter sections driving the magnetron. Modern inverter microwave ovens operate from rectified mains at higher frequencies than legacy 50/60 Hz transformer designs, requiring fast-switching IGBTs with low conduction losses. The RC-IGBT integration reduces component count in the densely packed inverter PCBs typical of consumer microwave ovens. The positive temperature coefficient in VCE(sat) supports stable thermal behavior across cooking duty cycles.
Recommended
Rice Cooker and Home Appliance Inverter Heating
Small induction-heating rice cookers and other home appliance heating inverters benefit from the IHW30N160R5XKSA1's compact TO-247 package and integrated diode topology. These consumer appliances typically use 100-130 VAC mains (or 220-240 VAC in Europe/Asia), rectified to ~150 VDC or 325 VDC bus voltages. The RC-IGBT handles resonant transients of 2-3x the bus voltage comfortably within its 1600 V rating. Infineon's R5 family tuning reduces the acoustic switching noise often generated by harder-switching IGBT generations, important for quiet kitchen appliances where users are present during operation.
Recommended
Industrial Soft-Start and Motor Drive Front-Ends
Beyond consumer appliances, the IHW30N160R5XKSA1 finds use in industrial soft-starter circuits and motor drive rectifier/buffer stages where 1600 V blocking and 30 A current handling are needed. The integrated diode simplifies line-frequency or PFC-stage designs. While industrial drives often use larger IGBT modules, the discrete TO-247 RC-IGBT is ideal for compact auxiliary circuits, snubber networks, and active inrush current limiters. The wide operating temperature range of -40C to +175C supports deployment in factory environments.
Recommended
Welding Inverter Primary Stages
The IHW30N160R5XKSA1 is a candidate for primary-side switching in small-to-medium welding inverters, where its 1600 V rating handles 3-phase rectified mains up to 540 VDC plus inductive spikes. The 30 A continuous current capacity suits MMA/TIG welding power levels up to approximately 150-200 A output. The R5 generation's positive temperature coefficient allows multiple devices to be paralleled for higher-power welders without complex current-balancing circuits. Infineon's ruggedness and field-stop technology deliver reliable operation under the harsh thermal cycling of welding duty cycles.
Recommended
Solar Inverter Auxiliary and Snubber Circuits
While not the main switching element in solar inverters, the IHW30N160R5XKSA1 serves well as a snubber or active clamp device in 1500 V DC solar string architectures where 1600 V blocking is required. It can also function in auxiliary discharge circuits, relay drivers, and protection stages within the inverter. The TO-247 package handles the dissipative requirements of clamping circuits that see infrequent but high-energy events. Designers benefit from the same Infineon long-term reliability and global supply chain used across solar inverter auxiliary subsystems.
Recommended
Recommended Products Summary
Engineering reference data for IHW30N160R5XKSA1 β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IHW30N160R5 | IHW40N160R5XKSA1 | IHW30N160R2XKSA1 |
|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon |
| Package | TO-247-3 | TO-247-3 (same) | TO-247-3 (same) | TO-247-3 (same) |
| VCES (Collector-Emitter Voltage) | 1600 V | 1600 V | 1600 V | 1600 V |
| Continuous Collector Current (TC=25C) | 60 A | 60 A | 80 A | 60 A |
| Rated Continuous Current (Datasheet Nominal) | 30 A | 30 A | 40 A | 30 A |
| Maximum Power Dissipation | 263 W | 263 W | [DATA_NEEDED] | [DATA_NEEDED] |
| VCE(sat) at Nominal Current | 1.85 V at 30 A | 1.85 V at 30 A | 1.85 V at 40 A | 2.0 V at 30 A (typical) |
| Technology Generation | R5 / RC-H5 | R5 / RC-H5 | R5 / RC-H5 | R2 (older) |
| Integrated Anti-Parallel Diode | Yes (RC-IGBT) | Yes (RC-IGBT) | Yes (RC-IGBT) | Yes (RC-IGBT) |
Key Differentiators
- Monolithically integrated anti-parallel diode (vs IHW30N160R2XKSA1)
- Higher current headroom in same package (vs IHW40N160R5XKSA1)
- Pin-compatible with standard TO-247-3 IGBTs (vs Discrete IGBT + external diode pairs)
Design Notes
The IHW30N160R5XKSA1 dissipates up to 263 W at TC=25C, but practical designs typically operate at much lower case temperatures. Use a thermal interface material (TIM) such as 0.1-0.2 mm silicone or indium foil between the TO-247 metal tab and an aluminum heatsink. Estimated: at 20 A continuous conduction with VCE(sat)=1.5 V and switching losses of 5 W, total dissipation is approximately 35 W; with theta_JC of approximately 0.45 C/W and heatsink theta_SA of 2 C/W, junction-to-ambient temperature rise is around 88 C above ambient, so adequate heatsinking is critical. The TO-247 mounting hole must be tightened to the datasheet-recommended torque (typically 0.6-0.8 N*m) to minimize thermal resistance.
When laying out a half-bridge using the IHW30N160R5XKSA1, minimize the high-side/low-side collector-emitter switching loop area to reduce parasitic inductance that causes voltage overshoot above the 1600 V VCES rating. Place the bus capacitors (typically 1-2 uF film plus 100 nF ceramic) physically within 1-2 cm of the IGBT collectors. The gate-drive return path should connect directly to the emitter pin, not to a separate ground plane, to avoid ground bounce causing gate-emitter voltage spikes that can exceed the +/-20 V gate rating.
Do not exceed the maximum gate-emitter voltage of +/-20 V (verify with datasheet); many field failures in IGBT circuits stem from exceeding VGE(max) due to parasitic inductance in the gate loop. Use a 10 kohm pull-down resistor from gate to emitter to prevent accidental turn-on during power-up. For parallel operation, ensure symmetric gate-drive paths (equal Rg values and matched driver propagation delays) to prevent current imbalance. Finally, the RC-IGBT's monolithic diode has a fixed current rating matching the IGBT section; do not assume you can drive external currents through it independently.
Compliance Information
RoHS compliant per Infineon product page. Not AEC-Q100 qualified - this is an industrial/consumer appliance part, not automotive grade. Lead-free TO-247-3 package suitable for modern SMT-adjacent through-hole assembly processes.
