IR2010STRPBF - 200V 3A Half-Bridge Gate Driver | Infineon
MPN: IR2010STRPBF β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $2.55 | $2.55 |
| 10 | $2.18 | $21.80 |
| 100 | $1.78 | $178.00 |
| 500 | $1.45 | $725.00 |
| 1,000 | $1.18 | $1,180.00 |
| 2,500 | $0.97 | $2,425.00 |
IR2010STRPBF Overview
A half-bridge gate driver is an integrated circuit that drives the high-side and low-side switches of a power half-bridge by translating low-voltage logic-level PWM signals from a microcontroller into high-current gate drive pulses capable of rapidly switching power MOSFETs or IGBTs. As a member of the gate driver category, it sits hierarchically above discrete gate-drive transistors and below full-bridge or three-phase driver ICs in the power-management semiconductor taxonomy.
Key features of the IR2010STRPBF include a floating high-side channel designed for bootstrap operation up to 200 V, gate drive supply (VCC) range of 10 V to 20 V, separate logic supply (VBS) range of 3.3 V to 20 V, 3.3 V logic-compatible inputs, undervoltage lockout (UVLO) for both high-side and low-side channels, dV/dt immunity, and tolerance to negative transient voltages on the switch node. The 95 ns typical propagation delay and matched channel-to-channel matching make it well suited to high-frequency switching.
Architecturally, the IR2010STRPBF uses a proprietary HVIC junction-isolation process that allows the high-side channel to float above the low-side ground reference, level-shift the input command, and drive an external N-channel MOSFET or IGBT through a bootstrap capacitor. The 16-SOIC package provides thermal resistance suitable for industrial-class switching frequencies, and the tape-and-reel (TR) shipping format supports high-volume SMT assembly.
Typical applications for this driver include audio Class D amplifiers, where the IR2010STRPBF's 95 ns propagation delay and matched channels preserve audio linearity; DC-DC synchronous buck and boost converters; motor-driver half-bridges up to 200 V bus; and any switched-mode power topology requiring a high-side bootstrap-capable half-bridge stage. It is also widely deployed in low-power solar inverters and LED drivers operating at bus voltages below 200 V.
When designing with the IR2010STRPBF, ensure that the bootstrap capacitor is sized to refresh the floating supply on every PWM cycle and that VCC decoupling follows Infineon's recommended 0.1 microfarad and electrolytic combination to suppress switching-node ringing. Use Kelvin-source sensing where possible to avoid ground bounce.
This page synthesizes distributor pricing, drop-in alternatives within the 16-SOIC footprint, and practical design considerations not consolidated on any single distributor page.
Drop-in alternatives for IR2010STRPBF β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with IR2010STRPBF (same form factor and footprint) β differing in Package, Undervoltage Lockout, RoHS Status, Driver Configuration, Input Logic Compatibility.
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
IR2010SPBF
β Drop-Inπ Reference alternative (not in catalog)
IR2110SPBF
β Drop-Inβ In Stock
$1.98 / Unit
View Datasheet βIR2109SPBF
β Drop-In β οΈ εζ°εΎ ιͺθ―β In Stock
$1.05 / Unit
View Datasheet βUCC27714DR
β Drop-Inπ Reference alternative (not in catalog)
NCP5106ADR2G
β Drop-Inπ Reference alternative (not in catalog)
IRS21867STRPBF
β Drop-Inβ In Stock
$1.55 / Unit
View Datasheet βIR2010STRPBF Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies (formerly International Rectifier) |
| Part Number | IR2010STRPBF |
| Driver Configuration | Half-Bridge (High-Side / Low-Side) |
| Number of Outputs | 2 (independent high and low side) |
| Peak Output Current (Source/Sink) | 3 A / 3 A |
| High-Side Floating Supply Voltage (VBS) | Up to 200 V |
| Gate Drive Supply Range (VCC) | 10 V to 20 V |
| Logic Supply Range | 3.3 V to 20 V |
| Logic Input Compatibility | 3.3 V logic compatible |
| Propagation Delay (Typical) | 95 ns |
| Undervoltage Lockout | Yes (both channels) |
| dV/dt Immunity | Yes |
| Negative Transient Tolerance | Yes (on switch node) |
| Bootstrap Capable | Yes (floating channel) |
| Package | 16-SOIC (DW, 0.300 inch, 7.50 mm body width) |
| Mounting Type | Surface Mount |
| Shipping Packaging | Tape & Reel (TR) |
| Polarity | Non-Inverting |
| RoHS Status | Compliant (PBF suffix indicates lead-free) |
IR2010STRPBF Pin Configuration
| Pin 1 | VCC β Low-side gate-drive supply (10 V to 20 V) |
| Pin 2 | HIN β High-side logic input (3.3 V logic compatible) |
| Pin 3 | LIN β Low-side logic input (3.3 V logic compatible) |
| Pin 4 | GND β Logic and low-side gate return |
| Pin 5 | NC β Not connected (per datasheet) |
| Pin 6 | NC β Not connected (per datasheet) |
| Pin 7 | LO β Low-side gate drive output |
| Pin 8 | VS β High-side floating supply return / switch node |
| Pin 9 | NC β Not connected (per datasheet) |
| Pin 10 | NC β Not connected (per datasheet) |
| Pin 11 | HO β High-side gate drive output |
| Pin 12 | VB β High-side floating supply (bootstrap) |
| Pin 13 | NC β Not connected (per datasheet) |
| Pin 14 | NC β Not connected (per datasheet) |
| Pin 15 | NC β Not connected (per datasheet) |
| Pin 16 | NC β Not connected (per datasheet) |
Typical Applications
IR2010STRPBF is suitable for 6 applications: Audio Class D Amplifier Half-Bridge Output Stage, Synchronous DC-DC Buck / Boost Converter, Motor Drive Half-Bridge Inverter Stage, Solar Micro-Inverter / Small Power Inverter, LED Driver / SMPS Half-Bridge Stage, Industrial Power Supply / Telecom Rectifier.
Audio Class D Amplifier Half-Bridge Output Stage
The IR2010STRPBF drives the high-side and low-side MOSFETs in a Class D audio half-bridge output stage, where its 3 A source/sink current and 95 ns propagation delay preserve the fast switching edges required for high-fidelity PWM reproduction. The 200 V high-side floating channel supports amplifier bus voltages up to Β±100 V rails, and matched channel-to-channel timing reduces audio distortion from gate-driver-induced timing skew. The bootstrap-capable floating channel eliminates the need for an isolated gate-drive supply on the high side, simplifying the BOM. Per the Infineon datasheet, the part's 3.3 V logic compatibility allows direct connection to most modern DSP and microcontroller PWM outputs without level shifters, an important benefit in compact Class D modules.
Recommended
Synchronous DC-DC Buck / Boost Converter
In synchronous DC-DC converters, the IR2010STRPBF drives the high-side and low-side MOSFETs of the synchronous half-bridge, leveraging its 95 ns propagation delay to support switching frequencies from 100 kHz to over 500 kHz. The 200 V rating covers industrial 48 V and 96 V bus applications, while the integrated undervoltage lockout on both channels prevents the power switches from operating in the linear region during start-up or transient brownouts, protecting them from thermal runaway. The 10 V to 20 V gate-drive supply range is compatible with most 12 V and 15 V converter rails, simplifying the bias design. Per Infineon's typical application circuit, the bootstrap diode and capacitor network is sized for refresh at the operating PWM duty cycle to maintain VBS regulation.
Recommended
Motor Drive Half-Bridge Inverter Stage
The IR2010STRPBF can drive the high-side and low-side IGBTs or MOSFETs in a low-voltage three-phase or half-bridge motor inverter leg, where its 200 V high-side floating channel tolerates the inductive switching-node swings generated by motor commutation. The dV/dt immunity ensures that the gate driver will not latch up from rapid switching-node transitions, while the negative-transient tolerance handles the inductive kick on the switch node during freewheeling diode conduction. With 3 A source/sink capability, the part can drive most IGBTs up to 20 A class used in fractional-horsepower motor drives. Designers should size the bootstrap capacitor based on the maximum PWM duty cycle and switching frequency to prevent UVLO trip, per the Infineon datasheet's recommended bootstrap calculation.
Recommended
Solar Micro-Inverter / Small Power Inverter
In solar micro-inverters and small grid-tie inverters operating below 200 V DC bus, the IR2010STRPBF drives the high-frequency switching MOSFETs in the DC-AC conversion stage. Its 200 V high-side rating matches typical 48 V battery and small PV-string bus voltages, while the 3 A gate drive current enables switching losses to be minimized by driving medium-power MOSFETs hard. The integrated UVLO on both rails is critical for battery-powered applications where the bus voltage may sag below the gate-drive UVLO threshold during peak loads, protecting the switches from partially-on operation. Infineon documents this topology in its typical application circuits; the part is suitable for sub-200 W sub-micro-inverter reference designs.
Recommended
LED Driver / SMPS Half-Bridge Stage
In resonant and hard-switched half-bridge LED driver power stages, the IR2010STRPBF provides matched high-side and low-side gate drive for the switching MOSFETs, supporting resonant LLC and phase-shifted full-bridge topologies used in higher-power LED ballasts. The 200 V rating suits LED drivers up to 100 W output from universal mains PFC pre-regulators, while the 3.3 V logic input compatibility allows direct connection to dimming and color-mixing microcontrollers. The 95 ns propagation delay is consistent with LLC zero-voltage-switching timing requirements, reducing dead-time mismatch that would otherwise cause circulating losses. The bootstrap-capable floating high-side channel removes the need for a separate isolated supply on the high-side, reducing BOM cost per Infineon reference designs.
Recommended
Industrial Power Supply / Telecom Rectifier
In telecom rectifier and industrial power supply designs, the IR2010STRPBF drives the synchronous-rectifier or half-bridge primary-side MOSFETs in isolated DC-DC converters. Its wide gate-drive supply range (10 V to 20 V) accommodates both 12 V and 15 V bias rails commonly used in telecom bricks, while the 200 V high-side capability supports 48 V input bus converters. The matched channel timing and low propagation delay (95 ns) minimize duty-cycle distortion in high-frequency isolated topologies. Undervoltage lockout on both channels prevents the power MOSFETs from operating in a partially-on state during converter start-up, brown-out, or fault conditions, which is essential for safety and reliability per Infineon's reliability guidelines. The 16-SOIC package is suitable for high-density telecom board layouts.
Recommended
Recommended Products Summary
Engineering reference data for IR2010STRPBF β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IR2010SPBF | IR2110SPBF | IR2109SPBF | UCC27714DR | NCP5106ADR2G | IRS21867STRPBF |
|---|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Texas Instruments | onsemi | Infineon Technologies |
| Package | 16-SOIC (DW) | 16-SOIC (DW) - same | 16-SOIC (DW) - same | 16-SOIC (DW) - same | 16-SOIC (DW) - same | 16-SOIC (DW) - same | 16-SOIC (DW) - same |
| Driver Configuration | Half-Bridge (High/Low side) | Half-Bridge (High/Low side) | Half-Bridge (High/Low side) with SD | Half-Bridge (High/Low side) | Half-Bridge (High/Low side) | Half-Bridge (High/Low side) | Half-Bridge (High/Low side) |
| High-Side Floating Supply Voltage (max) | 200 V | 200 V | 500 V | Lower (<= 200 V) | 600 V | 600 V | Similar |
| Peak Output Current (Source/Sink) | 3 A / 3 A | 3 A / 3 A | 2 A / 2 A | Similar | 4 A / 4 A | 0.25 A / 0.5 A | Similar |
| Propagation Delay (Typical) | 95 ns | 95 ns | Similar (~120 ns) | Similar | Similar (~90 ns) | Different | Similar |
| UVLO | Yes (both channels) | Yes (both channels) | Yes (both channels) | Yes (both channels) | Yes | Yes | Yes |
| Logic Compatibility | 3.3 V logic compatible | 3.3 V logic compatible | Logic level | Logic level | Logic level | Logic level | Logic level |
| Approx. Unit Price (1 pc, USD) | $2.55 | $2.55 (Tube) | $2.20-$2.80 | Lower (older part) | $1.50-$2.00 | $0.90-$1.20 | $2.00-$2.50 |
Key Differentiators
- 200 V high-side floating channel with 3 A source/sink (vs IR2110SPBF (500 V rating, 2 A drive))
- 3.3 V logic-compatible inputs (vs UCC27714DR (logic level))
- Dual-rail UVLO protection (vs NCP5106ADR2G (0.25 A drive))
Design Notes
Bootstrap capacitor sizing is critical: the IR2010STRPBF refreshes the high-side floating supply (VBS) on every PWM cycle through the bootstrap diode and capacitor. The bootstrap capacitor must supply the gate charge of the high-side MOSFET plus the quiescent current of the level-shift circuitry within one cycle, with voltage drop that does not trigger the high-side UVLO. A common starting-point rule is Cbootstrap >= Qg_total / (VCC - Vf_diode - VUVLO), then derate by duty cycle. Estimated: for Qg = 30 nC and 100 kHz switching, Cbootstrap >= 0.1 microfarad minimum; 0.47 microfarad is a conservative production choice per typical Infineon reference designs.
Keep the high-current gate-drive loops (VCC -> LO -> MOSFET gate -> source -> GND, and VB -> HO -> MOSFET gate -> VS -> VCC return) physically short and direct. Use a ground plane tied to the GND pin, and avoid routing the high-side HO return through the same plane as the low-side return - tie VS directly to the high-side MOSFET source with a Kelvin connection. Place the bootstrap diode and capacitor within 5 mm of the VB pin, per Infineon PCB layout guidelines for HVIC gate drivers. This minimizes parasitic inductance that otherwise causes gate-overshoot and ringing.
Estimated: at full 3 A peak gate drive into 1 nF equivalent gate capacitance at 500 kHz, the IR2010STRPBF dissipates approximately 0.45 W from gate charging alone (P = Qg * Vgs * fsw). The 16-SOIC (DW) package has a theta_JA of approximately 80-100 C/W on a standard 4-layer JEDEC test board, giving a junction-to-ambient rise of 36-45 C above 25 C ambient - well within the part's 150 C maximum junction. For sustained high-frequency operation at 500 kHz with large- gate-charge MOSFETs, add copper thermal relief directly under the exposed pad (if present) and consider reducing switching frequency to stay within thermal budget.
Common pitfalls when designing with the IR2010STRPBF include: (1) leaving the bootstrap capacitor undersized and triggering high-side UVLO at high duty cycles - size per the formula in the bootstrap design note; (2) forgetting the low-ESR decoupling on VCC (100 nF ceramic in parallel with at least 1 microfarad electrolytic); (3) routing LIN and HIN signals near the switch node where dV/dt can inject noise - use 3.3 V logic-compatible input threshold and add RC filtering if EMI is a concern; (4) operating above the absolute-maximum 200 V high-side rail during transient bus overshoot - add a TVS clamp on the bus; (5) ignoring the negative-transient rating on VS and letting the switch node ring below ground.
Compliance Information
PBF suffix indicates RoHS-compliant lead-free plating. AEC-Q100 not applicable for non-automotive driver IC; for AEC-Q100-qualified alternate consider Infineon automotive-grade equivalents. REACH and conflict-mineral compliance confirmed per Infineon product documentation.
