IRS21834STRPBF - 600V Half-Bridge Gate Driver | Infineon
MPN: IRS21834STRPBF β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $2.42 | $2.42 |
| 10 | $2.18 | $21.80 |
| 100 | $1.92 | $192.00 |
| 500 | $1.68 | $840.00 |
| 1,000 | $1.45 | $1,450.00 |
Drop-in alternatives for IRS21834STRPBF β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
IRS21834SPBF
β Drop-Inπ Reference alternative (not in catalog)
IRS21834STRPBF Maximum Ratings & Electrical Characteristics
| Configuration | Half-Bridge |
| Number of Drivers | 2 (high-side + low-side) |
| Input Logic | Inverting, Non-Inverting with Shutdown |
| Maximum Offset Voltage (High-Side) | 600 V |
| Gate Drive Supply (VCC, VBS) | 10 V to 20 V |
| Source Current (typ.) | 1.9 A |
| Sink Current (typ.) | 2.3 A |
| Propagation Delay (typ.) | 200 ns |
| Delay Matching (max) | Β±50 ns |
| Undervoltage Lockout (VCC, VBS) | Yes |
| Negative Transient Voltage Tolerance | dV/dt immune |
| Operating Temperature Range | -40C to +125C |
| Package | 14-SOIC (SOIC-14) |
| Mounting Type | Surface Mount |
| MSL Level | 1 (unlimited) |
| RoHS Status | Compliant |
| Lead-Free | Yes |
IRS21834STRPBF Pin Configuration
| Pin 1 | VCC β Logic and low-side gate drive supply (10-20 V) |
| Pin 2 | IN β Logic input for non-inverting input |
| Pin 3 | SD β Shutdown input (active low) |
| Pin 4 | COM β Low-side return / ground reference |
| Pin 5 | LO β Low-side gate drive output |
| Pin 6 | VS β High-side floating supply return |
| Pin 7 | HO β High-side gate drive output |
| Pin 8 | VB β High-side floating bootstrap supply |
| Pin 9 | NC β Not connected (per datasheet) |
| Pin 10 | NC β Not connected (per datasheet) |
| Pin 11 | VCC β Logic and low-side gate drive supply (10-20 V) |
| Pin 12 | IN β Logic input for non-inverting input |
| Pin 13 | SD β Shutdown input (active low) |
| Pin 14 | COM β Low-side return / ground reference |
Safe Operating Area (SOA) & Thermal Characteristics
No official SOA curve available for this component. Always operate within absolute maximum ratings specified in the datasheet. Ensure adequate cooling and derate as needed.
Typical Applications
IRS21834STRPBF is suitable for 6 applications: Three-Phase Motor Drive Inverter, Switch-Mode Power Supply (SMPS) Half-Bridge, Class-D Audio Amplifier Output Stage, Induction Heating Cooktop, Uninterruptible Power Supply (UPS) Inverter, Solar Inverter DC-AC Stage.
Three-Phase Motor Drive Inverter
The IRS21834STRPBF's 600 V floating channel rating makes it ideal for driving IGBTs in three-phase variable-frequency drives (VFDs) for HVAC compressors, industrial pumps, and appliance motors. With 1.9 A source / 2.3 A sink current capability, it switches 600 V/20 A IGBTs in <100 ns, minimizing switching losses at 15-20 kHz PWM. The bootstrap architecture eliminates the need for an isolated DC-DC converter for the high-side supply, reducing BOM cost by approximately 30% versus gate-drive transformers. The Β±50 ns delay matching between channels ensures balanced deadtime in the half-bridge, preventing shoot-through currents that would otherwise destroy the power stage. The SD (shutdown) pin enables hardware overcurrent protection by latching both outputs low within 200 ns of a fault signal.
Recommended
Switch-Mode Power Supply (SMPS) Half-Bridge
In half-bridge and full-bridge SMPS topologies for telecom and server power supplies, the IRS21834STRPBF provides the level-shifted gate drive required for the high-side primary switch. Its 600 V rating covers universal-input PFC + LLC converters operating from rectified 380 V DC bus. The matched 200 ns propagation delay between channels enables precise duty-cycle control at switching frequencies up to 200 kHz, while the UVLO protection prevents MOSFET operation in the linear region during cold-start conditions. The negative transient voltage tolerance (dV/dt immune) protects the driver from ringing on the switching node, critical for high-power LLC converters where reverse recovery spikes can exceed -50 V.
Recommended
Class-D Audio Amplifier Output Stage
The IRS21834STRPBF drives the complementary MOSFET output stage of professional Class-D audio amplifiers, where its 1.9 A/2.3 A gate drive current enables sub-20 ns switching transitions for low THD+N performance. The 600 V rating supports high-output-power amplifier designs (500 W+) with Β±150 V bus rails. Tight propagation-delay matching (Β±50 ns) maintains timing symmetry between the half-bridge outputs, preventing DC offset on the speaker output that would otherwise damage voice coils. The latch-immune CMOS input stage rejects switching-noise interference from the high-current output nodes, ensuring clean PWM generation at audio frequencies (20 Hz-20 kHz).
Recommended
Induction Heating Cooktop
Induction heating applications operating at 20-50 kHz with resonant LC tank circuits, the IRS21834STRPBF drives the high-current IGBT half-bridge that excites the induction coil. Its 600 V rating handles the resonant overshoot from the LC tank, which can reach 1.5x the DC bus voltage during zero-voltage switching (ZVS) transitions. The driver's 1.9 A source current rapidly charges IGBT gate capacitance (typically 50-100 nC total Qg), supporting switching frequencies that maximize coupling efficiency into the cookware load. The shutdown pin enables immediate gate blanking when the resonant tank loses zero-voltage conditions, preventing IGBT destruction from hard-switched transients.
Recommended
Uninterruptible Power Supply (UPS) Inverter
The IRS21834STRPBF is well-suited for UPS battery-backup inverter stages that convert 384 V DC battery voltage to 230 V AC output. Three IRS21834STRPBF devices drive a full H-bridge of IGBTs to synthesize pure sine-wave output with <3% THD. The 600 V floating channel rating handles the +400 V DC bus plus reactive flyback spikes, while the matched propagation delays maintain the deadtime necessary to prevent cross-conduction in the bridge legs. The driver's UVLO function ensures the IGBTs remain off if the battery voltage sags below the safe gate-drive threshold during deep discharge, protecting the battery from over-current conditions.
Recommended
Solar Inverter DC-AC Stage
In grid-tie solar inverters, the IRS21834STRPBF drives the IGBTs in the DC-AC conversion stage that interfaces the 400-600 V DC photovoltaic string to the 230 V AC grid. The driver's 600 V floating channel rating handles the high-side switch in the half-bridge output, while the matched propagation delays synchronize the switching edges to maintain grid-frequency accuracy (50/60 Hz) with low harmonic distortion. The negative transient voltage immunity protects against voltage ringing on the switching node caused by the long DC cable inductance from the PV array to the inverter, which can otherwise exceed -50 V and latch up lesser drivers.
Recommended
Recommended Products Summary
Engineering reference data for IRS21834STRPBF β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IRS21834SPBF | IRS2183STRPBF | IRS2181STRPBF |
|---|---|---|---|---|
| Package | 14-SOIC | 14-SOIC - same | 8-SOIC - different | 8-SOIC - different |
| Brand | Infineon | Infineon - same | Infineon - same | Infineon - same |
| Maximum Offset Voltage | 600 V | 600 V - same | 600 V - same | 600 V - same |
| Source Current (typ.) | 1.9 A | 1.9 A - same | 1.9 A - same | 1.9 A - same |
| Sink Current (typ.) | 2.3 A | 2.3 A - same | 2.3 A - same | 2.3 A - same |
| Configuration | Half-Bridge with SD | Half-Bridge with SD - same | Half-Bridge with SD - same | Half-Bridge - same |
| Gate Drive Supply | 10 V to 20 V | 10 V to 20 V - same | 10 V to 20 V - same | 10 V to 20 V - same |
| Propagation Delay (typ.) | 200 ns | 200 ns - same | 200 ns - same | 200 ns - same |
Key Differentiators
- Integrated shutdown (SD) function for hardware fault protection (vs IRS2181STRPBF)
- Higher pin count for noise isolation and dedicated gate return (vs IRS2183STRPBF)
- Functionally identical electrical specifications to IRS21834SPBF (vs IRS21834SPBF)
Design Notes
The bootstrap capacitor (between VB and VS) must be sized for at least 10x the MOSFET Qg to limit droop during switching cycles. For a 100 nC Qg MOSFET, use a 1 uF X7R ceramic capacitor rated for 25 V or higher. The bootstrap diode should be a fast-recovery type (trr < 100 ns) rated for the full bus voltage (600 V for this driver). Without sufficient bootstrap capacitance, the high-side gate will droop below UVLO threshold during continuous switching, causing the high-side MOSFET to operate in its linear region and overheat.
Keep the gate drive loop (HO-VS-HS-GND or LO-COM-LS-GND) as short as possible by placing the driver within 10 mm of the power MOSFET gate pin. Use a ground plane on the bottom layer to provide a low-impedance return path for the high di/dt switching currents. The VS node is a high-dV/dt switching node (up to 5 V/ns); keep sensitive analog traces away from it by at least 5 mm or shield with a ground trace. Place a 100 nF decoupling capacitor directly between VCC and COM pins, within 2 mm of the driver.
Do not exceed 600 V on the VB-to-VS voltage; this is the absolute maximum and the bootstrap supply should be limited to 20 V. Avoid driving the SD pin with a slow-edge signal (rise/fall > 1 us) as this can cause shoot-through during the transition; use a Schmitt-trigger buffer if driving from a microcontroller GPIO. The input logic pins (IN, SD) should not be left floating - tie IN high or low through 10 kohm resistors to VCC or COM to define a known state during power-up. Operating the driver above 200 kHz without sufficient bootstrap refresh will cause high-side UVLO shutdown.
Compliance Information
RoHS and REACH compliant per Infineon product documentation. Not AEC-Q100 qualified - for automotive applications, contact Infineon for automotive-grade part numbers.
