M321R8GA0EB2-CCP - 64GB DDR5-6400 ECC RDIMM | Samsung
MPN: M321R8GA0EB2-CCP ✓ Active| Qty | Unit Price | Extended |
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| 500 | $0 | $0.00 |
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Drop-in alternatives for M321R8GA0EB2-CCP — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
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M321R8GA0PB2-CCP
✅ Drop-In✓ In Stock
$287.86 / Unit
View Datasheet →M321R8GA0EB0-CWM
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Contact for price
View Datasheet →M321R8GA0EB2-CWM
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$599 / Unit
View Datasheet →MR51200-924K1-M321R8GA0EB2-CCP-V27
✅ Drop-In📋 Reference alternative (not in catalog)
A-Tech 64GB DDR5-6400 RDIMM
✅ Drop-In📋 Reference alternative (not in catalog)
M321R8GA0EB2-CCP Maximum Ratings & Electrical Characteristics
| Capacity | 64 GB |
| Memory Type | DDR5 SDRAM |
| Module Type | 288-pin RDIMM (Registered DIMM with ECC) |
| Speed | DDR5-6400 (6400 MT/s) |
| Bandwidth Class | PC5-51200R (51.2 GB/s) |
| CAS Latency | CL52 |
| Operating Voltage | 1.1 V |
| Rank x Organization | Dual Rank x4 (2Rx4) |
| Module Organization | 8G x 72 |
| DRAM Composition | 40 FBGA 4Gx4 DDR5 DRAM devices |
| ECC | ECC Registered (on-die + link ECC) |
| Pin Count | 288 |
| Form Factor | DIMM (server RDIMM) |
| Compatibility | Dell PowerEdge, HPE ProLiant, Lenovo ThinkSystem, Supermicro Xeon platforms |
| Standard Compliance | JEDEC DDR5 RDIMM |
M321R8GA0EB2-CCP standard Pin Configuration Guide
Complete pinout information for M321R8GA0EB2-CCP (standard package) with 288 pins. This digital IC includes GPIO, communication interfaces (UART, SPI, I2C), and power pins. Refer to the manufacturer datasheet for alternate pin functions and configuration options. Essential for embedded system design and PCB layout.
No detailed pinout data available for M321R8GA0EB2-CCP.
Refer to the datasheet for full pin configuration.
Estimated pin count: 288 pins (digital package)
Safe Operating Area (SOA) & Thermal Characteristics
No official SOA curve available for this digital IC. Always operate within absolute maximum ratings specified in the datasheet. Ensure adequate cooling and derate as needed.
Typical Applications
M321R8GA0EB2-CCP is suitable for 6 applications: Enterprise Server Memory, Virtualization and Multi-VM Hosts, High-Performance Computing Clusters, Database and In-Memory Analytics, Server Memory Upgrades and Fleet Refresh, Edge and Telecommunications Servers.
Enterprise Server Memory
The M321R8GA0EB2-CCP is designed for Intel Xeon-class enterprise servers from Dell PowerEdge, HPE ProLiant, Lenovo ThinkSystem, and Supermicro. Its 64GB capacity per 288-pin RDIMM maximizes memory per socket: an 8-channel server with 8 DIMMs holds 512GB, and multi-socket hosts reach multi-TB. The registered interface buffers address/command/control through an RCD, letting the memory controller drive more DIMMs per channel at 6400 MT/s than unbuffered designs. On-module DDR5 PMIC converts 5V to 1.1V, reducing motherboard VRM stress. Verify the platform QVL lists 6400 MT/s RDIMM support; otherwise the module trains at a lower JEDEC bin such as 5600 MT/s.
Recommended
Virtualization and Multi-VM Hosts
Hypervisor hosts running dozens of virtual machines benefit directly from the M321R8GA0EB2-CCP's 64GB-per-DIMM density. Distributor data (GlobalMemorySupply) specifically cites multi-VM environments and standard datacenter workloads as target applications for this module. DDR5's doubled bank groups and two independent 32-bit subchannels per DIMM improve concurrent VM memory access patterns versus DDR4 RDIMMs, while on-die ECC plus link ECC reduces correctable-error-driven VM migrations. At 6400 MT/s with CL52, per-channel bandwidth of roughly 51.2 GB/s feeds vCPU-heavy consolidation ratios. Deploying matching modules across all channels keeps interleaving uniform and avoids speed downtraining.
Recommended
High-Performance Computing Clusters
HPC nodes balancing memory bandwidth against capacity use the M321R8GA0EB2-CCP's DDR5-6400 interface (PC5-51200R, 51.2 GB/s per module) for bandwidth-sensitive codes such as CFD, molecular dynamics, and seismic processing. The dual-rank x4 organization enables rank interleaving, hiding DRAM refresh and row-activation latency behind consecutive accesses. ECC protection is essential for long-running HPC jobs where a single uncorrected bit error corrupts hours of computation. At 1.1V, per-module power stays low, easing thermal design in dense 1U/2U nodes. Populate channels evenly to sustain full 6400 MT/s training across all memory controllers.
Recommended
Database and In-Memory Analytics
In-memory databases and analytics engines (SAP HANA-class workloads, large Redis or OLAP caches) scale capacity first; the M321R8GA0EB2-CCP delivers 64GB per slot with ECC integrity. Distributor listings position this module for datacenter workloads where per-socket memory ceilings limit dataset residency. DDR5's on-die ECC halves error propagation risk versus DDR4 while its burst length of 16 and dual 32-bit subchannels improve random-access efficiency for point queries. With CL52 at 6400 MT/s, sustained read bandwidth supports scan-heavy analytical queries. Plan DIMM population symmetrically across channels to maximize aggregate bandwidth for column scans.
Recommended
Server Memory Upgrades and Fleet Refresh
The M321R8GA0EB2-CCP is a common upgrade part number for DDR5-generation servers, with A-Tech and NEMIX RAM both marketing certified replacements for it, indicating large installed-base demand. When refreshing fleets, matching capacity (64GB), rank (2Rx4), and speed (6400 MT/s) keeps SPD profiles uniform and avoids BIOS training anomalies when mixing die revisions (EB2/PB2). Because the module is JEDEC-compliant, it interoperates across Dell, HPE, Lenovo, and Supermicro platforms, simplifying spares pooling. Verify BIOS firmware is current to support 6400 MT/s RDIMM training tables before rollout.
Recommended
Edge and Telecommunications Servers
Carrier-grade edge servers and 5G/MEC platforms use DDR5 RDIMMs for ECC-protected, high-bandwidth memory in compact footprints. The M321R8GA0EB2-CCP's 1.1V operation reduces per-module power - meaningful at the edge where thermal budgets and power budgets are constrained - while 64GB density supports network function virtualization (NFV) and AI inference at the edge. Dual-rank x4 organization supports the interleaving that packet-processing dataplanes (DPDK-class workloads) rely on for line-rate throughput. The on-module PMIC and JEDEC-standard SPD enable tool-free integration into qualified telco server builds.
Recommended
Recommended Products Summary
Engineering reference data for M321R8GA0EB2-CCP — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | M321R8GA0PB2-CCP | M321R8GA0EB0-CWM | MR51200-924K1-M321R8GA0EB2-CCP-V27 | A-Tech 64GB DDR5-6400 RDIMM (PC5-51200R 2Rx4) |
|---|---|---|---|---|---|
| Package | 288-pin DIMM (RDIMM) | 288-pin DIMM (RDIMM) - same | 288-pin DIMM (RDIMM) - same | 288-pin DIMM (RDIMM) - same | 288-pin DIMM (RDIMM) - same |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | NEMIX RAM | A-Tech |
| Capacity | 64 GB | 64 GB | 64 GB | 64 GB | 64 GB |
| Speed | DDR5-6400 (PC5-51200R) | DDR5-6400 | [DATA_NEEDED] | DDR5-6400 (PC5-51200) | DDR5-6400 (PC5-51200R) |
| CAS Latency | CL52 | [DATA_NEEDED] | [DATA_NEEDED] | CL52 | CL52 |
| Rank x Organization | 2Rx4 (Dual Rank) | 2Rx4 | [DATA_NEEDED] | 2Rx4 | 2Rx4 |
| Voltage | 1.1 V | 1.1 V | 1.1 V | 1.1 V | 1.1 V |
| ECC | ECC Registered (RDIMM) | ECC Registered | ECC Registered | ECC Registered | ECC Registered |
| Warranty | Samsung manufacturer warranty | Samsung manufacturer warranty | Samsung manufacturer warranty | Lifetime warranty (NEMIX RAM) | [DATA_NEEDED] |
Key Differentiators
- Samsung-original DRAM and firmware qualification (vs MR51200-924K1-M321R8GA0EB2-CCP-V27)
- DDR5-6400 bin with ECC registration (vs M321R8GA0EB0-CWM)
- Cost-optimized certified equivalent availability (vs M321R8GA0PB2-CCP)
Design Notes
Never mix RDIMMs with UDIMMs or LRDIMMs on the same memory channel - JEDEC and all server vendors forbid it, and most platforms will fail to POST. Similarly, DDR5 and DDR4 modules are mechanically keyed differently (notch position) and cannot be interchanged. When mixing Samsung die revisions (EB2 vs PB2) within a server, validate the combination against the platform QVL and update BIOS firmware to the latest memory-training tables to ensure all channels train at 6400 MT/s.
DDR5-6400 RDIMMs dissipate more heat than 4800 MT/s bins, especially the on-module PMIC which handles the 5V-to-1.1V conversion. Estimate: at roughly 6-10W per fully-active 64GB RDIMM (estimate based on typical DDR5 RDIMM operating power; confirm with Samsung module power calculator for your workload), dense 24-DIMM 2U servers need directed airflow across DIMM slots. Ensure chassis airflow follows vendor DIMM population-order thermal rules, and avoid populating channels adjacent to blind baffles.
Populate DIMM slots following the server vendor's population order table (typically white slots first, one DIMM per channel before adding second DIMMs per channel). Balanced population preserves the memory interleaving that x4 dual-rank modules like the M321R8GA0EB2-CCP are designed to exploit, and keeps per-channel electrical loading symmetric so the RCD and memory controller can maintain 6400 MT/s training margins across all channels.
Compliance Information
Compliance declarations were not present in the verified web data. Samsung server RDIMMs are typically manufactured to meet EU RoHS, but formal status must be confirmed via Samsung's environmental documentation for this specific MPN.
